A systematic structural analysis of a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results of local structural analysis using Fourier diffractograms of HRTEM images, it was found that a-plane InGaN/GaN exhibits coherent epitaxial growth and a slight tilt of the growth direction between the GaN and InGaN layers. Furthermore, the In concentration and tilt angle increase simultaneously with increasing distance from the InGaN/GaN interface.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physica B: Condensed Matter|
|State||Published - Apr 1 2006|
|Event||Proceedings of the 23rd International Conference on Defects in Semiconductors - |
Duration: Jul 24 2005 → Jul 29 2005
Bibliographical noteFunding Information:
One of the authors (N.N.) is financially supported by the Japan Society for the Promotion of Science (JSPS) through the JSPS Research Fellowships for Young Scientists.
- A-plane InGaN /GaN
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering