In concentration and tilt of the a-plane (1 1 2̄ 0) InGaN/GaN film by TEM analysis

N. Nakanishi, K. Kusakabe, T. Yamazaki*, K. Ohkawa, I. Hashimoto

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations


A systematic structural analysis of a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results of local structural analysis using Fourier diffractograms of HRTEM images, it was found that a-plane InGaN/GaN exhibits coherent epitaxial growth and a slight tilt of the growth direction between the GaN and InGaN layers. Furthermore, the In concentration and tilt angle increase simultaneously with increasing distance from the InGaN/GaN interface.

Original languageEnglish (US)
Pages (from-to)527-531
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1
StatePublished - Apr 1 2006
Externally publishedYes
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: Jul 24 2005Jul 29 2005

Bibliographical note

Funding Information:
One of the authors (N.N.) is financially supported by the Japan Society for the Promotion of Science (JSPS) through the JSPS Research Fellowships for Young Scientists.


  • A-plane InGaN /GaN
  • SAD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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