In concentration and tilt of the a-plane (1 1 2̄ 0) InGaN/GaN film by TEM analysis

N. Nakanishi; K. Kusakabe; T. Yamazaki; K. Ohkawa; I. Hashimoto

doi:10.1016/j.physb.2005.12.134

In concentration and tilt of the a-plane (1 1 2̄ 0) InGaN/GaN film by TEM analysis

N. Nakanishi, K. Kusakabe, T. Yamazaki^*, K. Ohkawa, I. Hashimoto

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

A systematic structural analysis of a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results of local structural analysis using Fourier diffractograms of HRTEM images, it was found that a-plane InGaN/GaN exhibits coherent epitaxial growth and a slight tilt of the growth direction between the GaN and InGaN layers. Furthermore, the In concentration and tilt angle increase simultaneously with increasing distance from the InGaN/GaN interface.

Original language	English (US)
Pages (from-to)	527-531
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.134
State	Published - Apr 1 2006
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

Bibliographical note

Funding Information:
One of the authors (N.N.) is financially supported by the Japan Society for the Promotion of Science (JSPS) through the JSPS Research Fellowships for Young Scientists.

Keywords

A-plane InGaN /GaN
HRTEM
SAD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2005.12.134

Cite this

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title = "In concentration and tilt of the a-plane (1 1 {\=2} 0) InGaN/GaN film by TEM analysis",

abstract = "A systematic structural analysis of a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results of local structural analysis using Fourier diffractograms of HRTEM images, it was found that a-plane InGaN/GaN exhibits coherent epitaxial growth and a slight tilt of the growth direction between the GaN and InGaN layers. Furthermore, the In concentration and tilt angle increase simultaneously with increasing distance from the InGaN/GaN interface.",

keywords = "A-plane InGaN /GaN, HRTEM, SAD",

author = "N. Nakanishi and K. Kusakabe and T. Yamazaki and K. Ohkawa and I. Hashimoto",

note = "Funding Information: One of the authors (N.N.) is financially supported by the Japan Society for the Promotion of Science (JSPS) through the JSPS Research Fellowships for Young Scientists.; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

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doi = "10.1016/j.physb.2005.12.134",

language = "English (US)",

volume = "376-377",

pages = "527--531",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - In concentration and tilt of the a-plane (1 1 2̄ 0) InGaN/GaN film by TEM analysis

AU - Nakanishi, N.

AU - Kusakabe, K.

AU - Yamazaki, T.

AU - Ohkawa, K.

AU - Hashimoto, I.

N1 - Funding Information: One of the authors (N.N.) is financially supported by the Japan Society for the Promotion of Science (JSPS) through the JSPS Research Fellowships for Young Scientists.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - A systematic structural analysis of a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results of local structural analysis using Fourier diffractograms of HRTEM images, it was found that a-plane InGaN/GaN exhibits coherent epitaxial growth and a slight tilt of the growth direction between the GaN and InGaN layers. Furthermore, the In concentration and tilt angle increase simultaneously with increasing distance from the InGaN/GaN interface.

AB - A systematic structural analysis of a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results of local structural analysis using Fourier diffractograms of HRTEM images, it was found that a-plane InGaN/GaN exhibits coherent epitaxial growth and a slight tilt of the growth direction between the GaN and InGaN layers. Furthermore, the In concentration and tilt angle increase simultaneously with increasing distance from the InGaN/GaN interface.

KW - A-plane InGaN /GaN

KW - HRTEM

KW - SAD

UR - http://www.scopus.com/inward/record.url?scp=33645149719&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.134

DO - 10.1016/j.physb.2005.12.134

M3 - Conference article

AN - SCOPUS:33645149719

SN - 0921-4526

VL - 376-377

SP - 527

EP - 531

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

In concentration and tilt of the a-plane (1 1 2̄ 0) InGaN/GaN film by TEM analysis

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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