TY - GEN
T1 - Improving the electrical performance of a CAFM for gate oxide reliability measurements
AU - Lanza, M.
AU - Aguilera, L.
AU - Porti, M.
AU - Nafría, M.
AU - Aymerich, X.
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2009/4/28
Y1 - 2009/4/28
N2 - A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in ultrathin gate SiO2 layers. © 2009 IEEE.
AB - A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a standard CAFM where the typical I-V converter has been replaced by a log I-V amplifier. This substitution extends the current dynamic range from 1-100 pA to 1 pA-1 mA. With the broadening of the current dynamic range, the CAFM can access new applications, such as the reliability evaluation of metal-oxide-semiconductor gate dielectrics. As an example, the setup has been tested by analyzing breakdown spots induced in ultrathin gate SiO2 layers. © 2009 IEEE.
UR - http://ieeexplore.ieee.org/document/4800474/
UR - http://www.scopus.com/inward/record.url?scp=65249185478&partnerID=8YFLogxK
U2 - 10.1109/SCED.2009.4800474
DO - 10.1109/SCED.2009.4800474
M3 - Conference contribution
SN - 9781424428397
SP - 234
EP - 237
BT - Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
ER -