Keyphrases
Indium Gallium Nitride (InGaN)
100%
Multiple Quantum Wells
100%
Optical Properties
100%
Indium Content
100%
Quantum Well
75%
Crystal Quality
50%
Indium
50%
InGaN Quantum Wells
25%
Photoluminescence
25%
Photoluminescence Emission
25%
Growth Conditions
25%
Emission Intensity
25%
Effective Method
25%
Physical Processes
25%
Emission Device
25%
Residual Stress
25%
Growth Rate
25%
Red-emitting
25%
Temperature Rate
25%
Growth Temperature
25%
Nitride Semiconductors
25%
Composition Distribution
25%
Red Emission
25%
High Growth
25%
Uniform Composition
25%
Stress Evolution
25%
Well Width
25%
Emission Material
25%
Engineering
Quantum Well
100%
Indium Content
80%
Crystal Quality
40%
Residual Stress
20%
Growth Condition
20%
Emission Intensity
20%
Red Emission
20%
Nitride Semiconductor
20%
Realization
20%
Growth Temperature
20%
Material Science
Indium
100%
Quantum Well
100%
Photoluminescence
33%
Nitride Semiconductor
16%
Residual Stress
16%
Chemical Engineering
Indium
100%
Nitride
16%
Growth Temperature
16%