Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth

T. Kawashima; T. Hayakawa; M. Hayashi; T. Nagai; D. Iida; A. Miura; Y. Kasamatsu; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1002/pssc.200778486

Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth

T. Kawashima, T. Hayakawa, M. Hayashi, T. Nagai, D. Iida, A. Miura, Y. Kasamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

GaInN-based light-emitting diodes having m-plane heterostructures and multi quantum well (MQW) were fabricated on m-plane SiC by sidewall-seeded epitaxial lateral overgrowth. Defects such as stacking faults or dislocations strongly affect the emission wavelength and efficiency of MQW. Control of the V/III ratio during growth is found to be very effective for growing GaN from only one sidewall, by which we can reduce the area of the high-defect-density region. A light emitting diode (LED) with high internal quantum efficiency and an almost single peak LED was successfully fabricated. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English (US)
Title of host publication	Physica Status Solidi (C) Current Topics in Solid State Physics
Pages	2145-2147
Number of pages	3
DOIs	https://doi.org/10.1002/pssc.200778486
State	Published - Dec 1 2008
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Condensed Matter Physics

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Kawashima, T., Hayakawa, T., Hayashi, M., Nagai, T., Iida, D., Miura, A., Kasamatsu, Y., Iwaya, M., Kamiyama, S., Amano, H., & Akasaki, I. (2008). Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth. In Physica Status Solidi (C) Current Topics in Solid State Physics (pp. 2145-2147) https://doi.org/10.1002/pssc.200778486

@inproceedings{a80ffe8c59304b2193a7a7a8801150cf,

title = "Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth",

abstract = "GaInN-based light-emitting diodes having m-plane heterostructures and multi quantum well (MQW) were fabricated on m-plane SiC by sidewall-seeded epitaxial lateral overgrowth. Defects such as stacking faults or dislocations strongly affect the emission wavelength and efficiency of MQW. Control of the V/III ratio during growth is found to be very effective for growing GaN from only one sidewall, by which we can reduce the area of the high-defect-density region. A light emitting diode (LED) with high internal quantum efficiency and an almost single peak LED was successfully fabricated. {\textcopyright} 2008 Wiley-VCH Verlag GmbH & Co. KGaA.",

author = "T. Kawashima and T. Hayakawa and M. Hayashi and T. Nagai and D. Iida and A. Miura and Y. Kasamatsu and M. Iwaya and S. Kamiyama and H. Amano and I. Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2008",

month = dec,

day = "1",

doi = "10.1002/pssc.200778486",

language = "English (US)",

pages = "2145--2147",

booktitle = "Physica Status Solidi (C) Current Topics in Solid State Physics",

}

Kawashima, T, Hayakawa, T, Hayashi, M, Nagai, T, Iida, D, Miura, A, Kasamatsu, Y, Iwaya, M, Kamiyama, S, Amano, H & Akasaki, I 2008, Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth. in Physica Status Solidi (C) Current Topics in Solid State Physics. pp. 2145-2147. https://doi.org/10.1002/pssc.200778486

TY - GEN

T1 - Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth

AU - Kawashima, T.

AU - Hayakawa, T.

AU - Hayashi, M.

AU - Nagai, T.

AU - Iida, D.

AU - Miura, A.

AU - Kasamatsu, Y.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2008/12/1

Y1 - 2008/12/1

N2 - GaInN-based light-emitting diodes having m-plane heterostructures and multi quantum well (MQW) were fabricated on m-plane SiC by sidewall-seeded epitaxial lateral overgrowth. Defects such as stacking faults or dislocations strongly affect the emission wavelength and efficiency of MQW. Control of the V/III ratio during growth is found to be very effective for growing GaN from only one sidewall, by which we can reduce the area of the high-defect-density region. A light emitting diode (LED) with high internal quantum efficiency and an almost single peak LED was successfully fabricated. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - GaInN-based light-emitting diodes having m-plane heterostructures and multi quantum well (MQW) were fabricated on m-plane SiC by sidewall-seeded epitaxial lateral overgrowth. Defects such as stacking faults or dislocations strongly affect the emission wavelength and efficiency of MQW. Control of the V/III ratio during growth is found to be very effective for growing GaN from only one sidewall, by which we can reduce the area of the high-defect-density region. A light emitting diode (LED) with high internal quantum efficiency and an almost single peak LED was successfully fabricated. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200778486

UR - http://www.scopus.com/inward/record.url?scp=57249085205&partnerID=8YFLogxK

U2 - 10.1002/pssc.200778486

DO - 10.1002/pssc.200778486

M3 - Conference contribution

SP - 2145

EP - 2147

BT - Physica Status Solidi (C) Current Topics in Solid State Physics

ER -

Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth

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