Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

Ryota Senda, Aya Miura, Takeshi Kawashima, Daisuke Iida, Tetsuya Nagai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline-quality-grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO-grown GaInN layer on the SELO GaN underlying layer is twice as high as that of ELO-grown GaInN layer on the m-plane GaN template. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Original languageEnglish (US)
Title of host publicationPhysica Status Solidi (C) Current Topics in Solid State Physics
Pages3045-3047
Number of pages3
DOIs
StatePublished - Dec 1 2008
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Condensed Matter Physics

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