Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

Ryota Senda; Aya Miura; Takeshi Kawashima; Daisuke Iida; Tetsuya Nagai; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1002/pssc.200779252

Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

Ryota Senda, Aya Miura, Takeshi Kawashima, Daisuke Iida, Tetsuya Nagai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline-quality-grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO-grown GaInN layer on the SELO GaN underlying layer is twice as high as that of ELO-grown GaInN layer on the m-plane GaN template. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English (US)
Title of host publication	Physica Status Solidi (C) Current Topics in Solid State Physics
Pages	3045-3047
Number of pages	3
DOIs	https://doi.org/10.1002/pssc.200779252
State	Published - Dec 1 2008
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200779252

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title = "Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth",

abstract = "We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline-quality-grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO-grown GaInN layer on the SELO GaN underlying layer is twice as high as that of ELO-grown GaInN layer on the m-plane GaN template. {\textcopyright} 2008 Wiley-VCH Verlag GmbH & Co. KGaA.",

author = "Ryota Senda and Aya Miura and Takeshi Kawashima and Daisuke Iida and Tetsuya Nagai and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

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year = "2008",

month = dec,

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doi = "10.1002/pssc.200779252",

language = "English (US)",

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T1 - Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

AU - Senda, Ryota

AU - Miura, Aya

AU - Kawashima, Takeshi

AU - Iida, Daisuke

AU - Nagai, Tetsuya

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline-quality-grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO-grown GaInN layer on the SELO GaN underlying layer is twice as high as that of ELO-grown GaInN layer on the m-plane GaN template. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - We report the fabrication of an epitaxial lateral overgrown (ELO) GaInN layer on a high crystalline-quality-grooved GaN template, which is improved by a sidewall ELO (SELO) technology. The photoluminescence peak intensity of ELO-grown GaInN layer on the SELO GaN underlying layer is twice as high as that of ELO-grown GaInN layer on the m-plane GaN template. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200779252

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U2 - 10.1002/pssc.200779252

DO - 10.1002/pssc.200779252

M3 - Conference contribution

SP - 3045

EP - 3047

BT - Physica Status Solidi (C) Current Topics in Solid State Physics

ER -

Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

Abstract

Bibliographical note

ASJC Scopus subject areas

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