Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays

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13 Scopus citations


This study demonstrates the performance improvements of InGaN-based red lightemitting diodes (LEDs) by fabricating micro-holes in the planar mesa. The peak wavelengths of the micro-hole LEDs (MHLEDs) exhibited a blue-shift of around 3 nm compared to the planar LEDs (PLEDs) at the same current density. The lowest full width at half maximum of MHLEDs was 59 nm, which is slightly less than that of the PLEDs. The light output power and external quantum efficiency of the MHLED with a wavelength of 634 nm at 20 mA were 0.6 mW and 1.5%, which are 8.5% higher than those of the PLED.
Original languageEnglish (US)
JournalOptics Express
StatePublished - Aug 24 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-09-01
Acknowledgements: King Abdullah University of Science and Technology (BAS/1/1676-01-01).

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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