Improved GaNxAs1-x quality grown by molecular beam epitaxy with dispersive nitrogen source

S. Z. Wang*, S. F. Yoon, W. K. Loke, T. K. Ng, W. J. Fan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


A modified growth technique that uses dispersive nitrogen from a rf activated plasma nitrogen source in conjunction with SSMBE for the growth of the GaAsN layers on GaAs substrate was demonstrated. When interrupted by a shutter, the direct nitrogen beam from the plasma source minimized the bombardment effect of energetic nitrogen ions on the growth surface. XRD and PL results indicate that in terms of luminescence, crystalline, and interface quality, high-quality GaAsN epilayers can be achieved using this growth mode. Preliminary comparison of light microscopy pictures suggests that the surface of the GaAsN sample grown using the dispersive nitrogen source has fewer defects compared to that of the sample grown using the direct nitrogen beam.

Original languageEnglish (US)
Pages (from-to)1364-1367
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
StatePublished - Jul 2002
Externally publishedYes
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: Jan 6 2002Jan 10 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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