Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

Ana L. Salas Villaseñor; Israel I. Mejia; Mérida Sotelo-Lerma; Zaibing Guo; Husam N. Alshareef; Manuel Angel Quevedo Quevedo-López

doi:10.1088/0268-1242/29/8/085001

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

Ana L. Salas Villaseñor, Israel I. Mejia, Mérida Sotelo-Lerma, Zaibing Guo, Husam N. Alshareef, Manuel Angel Quevedo Quevedo-López

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

Original language	English (US)
Pages (from-to)	085001
Journal	Semiconductor Science and Technology
Volume	29
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/29/8/085001
State	Published - Jun 6 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Authors would like to thank CONACyT project 158281, The AFOSR project FA9550-10-1-0183, and COSMOS for partially supporting this work.

ASJC Scopus subject areas

Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1088/0268-1242/29/8/085001

Cite this

@article{9254d87a48c5488ca5faf8bdc5ef4a36,

title = "Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments",

abstract = "Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). {\textcopyright} 2014 IOP Publishing Ltd.",

author = "{Salas Villase{\~n}or}, {Ana L.} and Mejia, {Israel I.} and M{\'e}rida Sotelo-Lerma and Zaibing Guo and Alshareef, {Husam N.} and Quevedo-L{\'o}pez, {Manuel Angel Quevedo}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Authors would like to thank CONACyT project 158281, The AFOSR project FA9550-10-1-0183, and COSMOS for partially supporting this work.",

year = "2014",

month = jun,

day = "6",

doi = "10.1088/0268-1242/29/8/085001",

language = "English (US)",

volume = "29",

pages = "085001",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

AU - Salas Villaseñor, Ana L.

AU - Mejia, Israel I.

AU - Sotelo-Lerma, Mérida

AU - Guo, Zaibing

AU - Alshareef, Husam N.

AU - Quevedo-López, Manuel Angel Quevedo

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Authors would like to thank CONACyT project 158281, The AFOSR project FA9550-10-1-0183, and COSMOS for partially supporting this work.

PY - 2014/6/6

Y1 - 2014/6/6

N2 - Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

AB - Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.

UR - http://hdl.handle.net/10754/563584

UR - https://iopscience.iop.org/article/10.1088/0268-1242/29/8/085001

UR - http://www.scopus.com/inward/record.url?scp=84904617156&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/29/8/085001

DO - 10.1088/0268-1242/29/8/085001

M3 - Article

SN - 0268-1242

VL - 29

SP - 085001

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

Abstract

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ASJC Scopus subject areas

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