Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.
|Original language||English (US)|
|Journal||Semiconductor Science and Technology|
|State||Published - Jun 6 2014|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Authors would like to thank CONACyT project 158281, The AFOSR project FA9550-10-1-0183, and COSMOS for partially supporting this work.
ASJC Scopus subject areas
- Materials Chemistry
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Condensed Matter Physics