Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Sep 19 2011|
Bibliographical noteFunding Information:
The authors acknowledge Y. Andrault for wafer preparation and P. Bôle Rothen for support. This work was supported by the Axpo Naturstrom Fonds and by the European Commission (FP7 project 20plμs, Grant No. 256695).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)