Imprint in ferroelectric capacitors

William L. Warren; Bruce A. Tuttle; Duane Dimos; Gordon E. Pike; Husam N. Al-Shareef; Ramamoorthy Ramesh; Joseph T. Evans

doi:10.1143/jjap.35.1521

Imprint in ferroelectric capacitors

William L. Warren^*, Bruce A. Tuttle, Duane Dimos, Gordon E. Pike, Husam N. Al-Shareef, Ramamoorthy Ramesh, Joseph T. Evans

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

122 Scopus citations

Abstract

We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O₃ capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti³⁺ centers and/or a compositional dependent oxygen vacancy density.

Original language	English (US)
Pages (from-to)	1521-1524
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	2 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.35.1521
State	Published - Feb 1996
Externally published	Yes

Keywords

Defects
Ferroelectrics
Imprint
PZT
Polarization-voltage
Thin film

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/jjap.35.1521

Cite this

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title = "Imprint in ferroelectric capacitors",

abstract = "We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.",

keywords = "Defects, Ferroelectrics, Imprint, PZT, Polarization-voltage, Thin film",

author = "Warren, {William L.} and Tuttle, {Bruce A.} and Duane Dimos and Pike, {Gordon E.} and Al-Shareef, {Husam N.} and Ramamoorthy Ramesh and Evans, {Joseph T.}",

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T1 - Imprint in ferroelectric capacitors

AU - Warren, William L.

AU - Tuttle, Bruce A.

AU - Dimos, Duane

AU - Pike, Gordon E.

AU - Al-Shareef, Husam N.

AU - Ramesh, Ramamoorthy

AU - Evans, Joseph T.

PY - 1996/2

Y1 - 1996/2

N2 - We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.

AB - We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.

KW - Defects

KW - Ferroelectrics

KW - Imprint

KW - PZT

KW - Polarization-voltage

KW - Thin film

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2 SUPPL. B

ER -

Imprint in ferroelectric capacitors

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Keywords

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