Importance of intramolecular electron spin relaxation in small molecule semiconductors

L. Schulz, M. Willis, L. Nuccio, P. Shusharov, S. Fratini, F. L. Pratt, W. P. Gillin, T. Kreouzis, M. Heeney, N. Stingelin, C. A. Stafford, D. J. Beesley, C. Bernhard, J. E. Anthony, I. McKenzie, J. S. Lord, A. J. Drew

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport. © 2011 American Physical Society.
Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number8
DOIs
StatePublished - Aug 26 2011
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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