Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

Guangnan Zhou, Kwang Hong Lee, Dalaver H. Anjum, Qiang Zhang, Xixiang Zhang, Chuan Seng Tan, Guangrui Xia

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12 Scopus citations


Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.
Original languageEnglish (US)
Pages (from-to)1117
JournalOptical Materials Express
Issue number5
StatePublished - Apr 3 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Natural Science and Engineering Research Council of Canada (NSERC); National Research Foundation Singapore through the Singapore MIT Alliance for Research and Technology's Low Energy Electronic Systems (LEES) IRG, Competitive Research Program (NRF-CRP12-2013-04); Innovation Grant from SMART Innovation Centre.Dr. Mario Beaudoin from the Advanced Nanofabrication Facility at the University of British Columbia is acknowledged for the training in HRXRD and EPD measurements and helpful discussions.


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