Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Wejdan S. Alghamdi; Aiman Fakieh; Hendrik Faber; Yen Hung Lin; Wei Zhi Lin; Po Yu Lu; Chien Hao Liu; Khaled Nabil Salama; Thomas D. Anthopoulos

doi:10.1063/5.0126935

Impact of layer thickness on the operating characteristics of In₂O₃/ZnO heterojunction thin-film transistors

Wejdan S. Alghamdi, Aiman Fakieh, Hendrik Faber, Yen Hung Lin, Wei Zhi Lin, Po Yu Lu, Chien Hao Liu, Khaled Nabil Salama, Thomas D. Anthopoulos^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V-1 s-1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.

Original language	English (US)
Article number	233503
Journal	Applied Physics Letters
Volume	121
Issue number	23
DOIs	https://doi.org/10.1063/5.0126935
State	Published - Dec 5 2022

Bibliographical note

Funding Information:
This publication is based upon the work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF-3079. We are grateful for assistance from the KAUST Solar Center and KAUST Core labs. Additionally, we would like to thank Dr. Cheng Sheng Lin of Pitotech Co., Ltd. (Taiwan) for useful suggestions and assistance in device modeling and simulation.

Funding Information:
This publication is based upon the work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF-3079. We are grateful for assistance from the KAUST Solar Center and KAUST Core labs. Additionally, we would like to thank Dr. Cheng Sheng Lin of Pitotech Co., Ltd. (Taiwan) for useful suggestions and assistance in device modeling and simulation.

Publisher Copyright:
© 2022 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/5.0126935

Cite this

@article{a5e6ff41713246129e7f13797d703779,

title = "Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors",

abstract = "Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V-1 s-1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.",

author = "Alghamdi, {Wejdan S.} and Aiman Fakieh and Hendrik Faber and Lin, {Yen Hung} and Lin, {Wei Zhi} and Lu, {Po Yu} and Liu, {Chien Hao} and Salama, {Khaled Nabil} and Anthopoulos, {Thomas D.}",

note = "Funding Information: This publication is based upon the work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF-3079. We are grateful for assistance from the KAUST Solar Center and KAUST Core labs. Additionally, we would like to thank Dr. Cheng Sheng Lin of Pitotech Co., Ltd. (Taiwan) for useful suggestions and assistance in device modeling and simulation. Funding Information: This publication is based upon the work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF-3079. We are grateful for assistance from the KAUST Solar Center and KAUST Core labs. Additionally, we would like to thank Dr. Cheng Sheng Lin of Pitotech Co., Ltd. (Taiwan) for useful suggestions and assistance in device modeling and simulation. Publisher Copyright: {\textcopyright} 2022 Author(s).",

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AU - Alghamdi, Wejdan S.

AU - Fakieh, Aiman

AU - Faber, Hendrik

AU - Lin, Yen Hung

AU - Lin, Wei Zhi

AU - Lu, Po Yu

AU - Liu, Chien Hao

AU - Salama, Khaled Nabil

AU - Anthopoulos, Thomas D.

N1 - Funding Information: This publication is based upon the work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF-3079. We are grateful for assistance from the KAUST Solar Center and KAUST Core labs. Additionally, we would like to thank Dr. Cheng Sheng Lin of Pitotech Co., Ltd. (Taiwan) for useful suggestions and assistance in device modeling and simulation. Funding Information: This publication is based upon the work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF-3079. We are grateful for assistance from the KAUST Solar Center and KAUST Core labs. Additionally, we would like to thank Dr. Cheng Sheng Lin of Pitotech Co., Ltd. (Taiwan) for useful suggestions and assistance in device modeling and simulation. Publisher Copyright: © 2022 Author(s).

PY - 2022/12/5

Y1 - 2022/12/5

N2 - Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V-1 s-1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.

AB - Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V-1 s-1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.

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