Abstract
We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.
Original language | English (US) |
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Article number | 053107 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 5 |
DOIs | |
State | Published - Aug 7 2013 |
Externally published | Yes |
Bibliographical note
Funding Information:The authors acknowledge financial support from the Australian Solar Institute (ASI)/Australian Renewable Energy Agency (ARENA) under the ANU PV Core project, Postdoctoral Fellowship and Australia-Germany Collaborative Solar Research and Development projects. The authors also acknowledge support from the Australian Government's NCRIS/EIF funding programs for access to Heavy Ion Accelerator Facilities at the Australian National University. They thank Professor A. Cuevas for valuable discussions.
ASJC Scopus subject areas
- General Physics and Astronomy