Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

Riya Bose; Aniruddha Adhikari; Victor M Burlakov; Guangyu Liu; Mohammed Haque; Davide Priante; Mohamed N. Hedhili; Nimer Wehbe; Chao Zhao; Haoze Yang; Tien Khee Ng; Alain Goriely; Osman Bakr; Tao Wu; Boon S. Ooi; Omar F. Mohammed

doi:10.1021/acsenergylett.7b01330

Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

Riya Bose, Aniruddha Adhikari, Victor M Burlakov, Guangyu Liu, Mohammed Haque, Davide Priante, Mohamed N. Hedhili, Nimer Wehbe, Chao Zhao, Haoze Yang, Tien Khee Ng, Alain Goriely, Osman Bakr, Tao Wu, Boon S. Ooi, Omar F. Mohammed

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.

Original language	English (US)
Pages (from-to)	476-481
Number of pages	6
Journal	ACS Energy Letters
Volume	3
Issue number	2
DOIs	https://doi.org/10.1021/acsenergylett.7b01330
State	Published - Jan 30 2018

Bibliographical note

KAUST Repository Item: Exported on 2022-04-21
Acknowledgements: The work reported here was supported by King Abdullah University of Science and Technology (KAUST).

Access to Document

10.1021/acsenergylett.7b01330

https://repository.kaust.edu.sa/bitstream/10754/627010/1/acsenergylett.7b01330.pdf

Cite this

Bose, R., Adhikari, A., Burlakov, V. M., Liu, G., Haque, M., Priante, D., Hedhili, M. N., Wehbe, N., Zhao, C., Yang, H., Ng, T. K., Goriely, A., Bakr, O., Wu, T., Ooi, B. S., & Mohammed, O. F. (2018). Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy. ACS Energy Letters, 3(2), 476-481. https://doi.org/10.1021/acsenergylett.7b01330

@article{9cd40d13b1aa46b0bbf4adaec11ab7ef,

title = "Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy",

abstract = "Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.",

author = "Riya Bose and Aniruddha Adhikari and Burlakov, {Victor M} and Guangyu Liu and Mohammed Haque and Davide Priante and Hedhili, {Mohamed N.} and Nimer Wehbe and Chao Zhao and Haoze Yang and Ng, {Tien Khee} and Alain Goriely and Osman Bakr and Tao Wu and Ooi, {Boon S.} and Mohammed, {Omar F.}",

note = "KAUST Repository Item: Exported on 2022-04-21 Acknowledgements: The work reported here was supported by King Abdullah University of Science and Technology (KAUST).",

year = "2018",

month = jan,

day = "30",

doi = "10.1021/acsenergylett.7b01330",

language = "English (US)",

volume = "3",

pages = "476--481",

journal = "ACS Energy Letters",

issn = "2380-8195",

publisher = "AMER CHEMICAL SOC",

number = "2",

}

TY - JOUR

T1 - Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

AU - Bose, Riya

AU - Adhikari, Aniruddha

AU - Burlakov, Victor M

AU - Liu, Guangyu

AU - Haque, Mohammed

AU - Priante, Davide

AU - Hedhili, Mohamed N.

AU - Wehbe, Nimer

AU - Zhao, Chao

AU - Yang, Haoze

AU - Ng, Tien Khee

AU - Goriely, Alain

AU - Bakr, Osman

AU - Wu, Tao

AU - Ooi, Boon S.

AU - Mohammed, Omar F.

N1 - KAUST Repository Item: Exported on 2022-04-21 Acknowledgements: The work reported here was supported by King Abdullah University of Science and Technology (KAUST).

PY - 2018/1/30

Y1 - 2018/1/30

N2 - Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.

AB - Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.

UR - http://hdl.handle.net/10754/627010

UR - http://pubs.acs.org/doi/10.1021/acsenergylett.7b01330

UR - http://www.scopus.com/inward/record.url?scp=85041800283&partnerID=8YFLogxK

U2 - 10.1021/acsenergylett.7b01330

DO - 10.1021/acsenergylett.7b01330

M3 - Article

AN - SCOPUS:85041800283

SN - 2380-8195

VL - 3

SP - 476

EP - 481

JO - ACS Energy Letters

JF - ACS Energy Letters

IS - 2

ER -

Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this