Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

Chun Wei Lee, Xiaochen Dong, Seok Hong Goh, Junling Wang, Jun Wei, Lain-Jong Li

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces.

Original languageEnglish (US)
Pages (from-to)4745-4747
Number of pages3
JournalJournal of Physical Chemistry C
Issue number12
StatePublished - Mar 26 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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