III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

T. Detchprohm, Xiaohang Li, S.-C. Shen, P.D. Yoder, R.D. Dupuis

Research output: Chapter in Book/Report/Conference proceedingChapter

13 Scopus citations


The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
Original languageEnglish (US)
Title of host publicationSemiconductors and Semimetals
PublisherElsevier BV
Number of pages46
ISBN (Print)9780128095843
StatePublished - Nov 5 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.

ASJC Scopus subject areas

  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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