Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

Ronghui Lin; J H Song; Y F Lu; Z L Wang

doi:10.1088/0957-4484/20/36/365703

Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

Ronghui Lin, J H Song, Y F Lu, Z L Wang

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42 Scopus citations

Abstract

Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.

Original language	English (US)
Pages (from-to)	365703
Journal	Nanotechnology
Volume	20
Issue number	36
DOIs	https://doi.org/10.1088/0957-4484/20/36/365703
State	Published - Aug 18 2009
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, NSF (DMS 0706436, CMMI 0403671). SSL gratefully acknowledges the fellowship from China Scholarship Council (CSC) (No. 2008632026). We thank Dr Jung-il Hong for his guidance in PLD synthesis.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator",

abstract = "Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. {\textcopyright} 2009 IOP Publishing Ltd.",

author = "Ronghui Lin and Song, {J H} and Lu, {Y F} and Wang, {Z L}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, NSF (DMS 0706436, CMMI 0403671). SSL gratefully acknowledges the fellowship from China Scholarship Council (CSC) (No. 2008632026). We thank Dr Jung-il Hong for his guidance in PLD synthesis. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), DARPA/ARO W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, NSF (DMS 0706436, CMMI 0403671). SSL gratefully acknowledges the fellowship from China Scholarship Council (CSC) (No. 2008632026). We thank Dr Jung-il Hong for his guidance in PLD synthesis. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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N2 - Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.

AB - Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.

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Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

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