Identification of the prime optical center in GaN: Eu3+

I. S. Roqan, K. P. O'Donnell, R. W. Martin, P. R. Edwards, S. F. Song, A. Vantomme, K. Lorenz, E. Alves, M. Boćkowski

Research output: Contribution to journalArticlepeer-review

94 Scopus citations


We identify a dominant light-emitting center in ion-implanted GaN: Eu 3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a "subgap" excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its 7F2 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.

Original languageEnglish (US)
Article number085209
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number8
StatePublished - Feb 10 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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