A refractory-metal-free C40 TiSi 2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi 2 has a hexagonal structure with the space group P6 2 22(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi 2 can be directly achieved from C40 TiSi 2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi 2 into the subquarter micron region in semiconductor device fabrication.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)