Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation

K. Li; S. Y. Chen; Z. X. Shen

doi:10.1063/1.1378309

Identification of refractory-metal-free C40 TiSi₂ for low temperature C54 TiSi₂ formation

K. Li, S. Y. Chen, Z. X. Shen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A refractory-metal-free C40 TiSi₂ phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi₂ has a hexagonal structure with the space group P6₂22(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi₂ can be directly achieved from C40 TiSi₂ at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi₂ into the subquarter micron region in semiconductor device fabrication.

Original language	English (US)
Pages (from-to)	3989-3991
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	25
DOIs	https://doi.org/10.1063/1.1378309
State	Published - Jun 18 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1378309

Cite this

@article{c7a3c8dee95a4206a7f8545b8f7fd006,

title = "Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation",

abstract = "A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication.",

author = "K. Li and Chen, {S. Y.} and Shen, {Z. X.}",

year = "2001",

month = jun,

day = "18",

doi = "10.1063/1.1378309",

language = "English (US)",

volume = "78",

pages = "3989--3991",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "25",

}

TY - JOUR

T1 - Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation

AU - Li, K.

AU - Chen, S. Y.

AU - Shen, Z. X.

PY - 2001/6/18

Y1 - 2001/6/18

N2 - A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication.

AB - A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication.

UR - http://www.scopus.com/inward/record.url?scp=0038974569&partnerID=8YFLogxK

U2 - 10.1063/1.1378309

DO - 10.1063/1.1378309

M3 - Article

AN - SCOPUS:0038974569

SN - 0003-6951

VL - 78

SP - 3989

EP - 3991

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Identification of refractory-metal-free C40 TiSi₂ for low temperature C54 TiSi₂ formation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this