Identification of refractory-metal-free C40 TiSi 2 for low temperature C54 TiSi 2 formation

Kun Li, S. Y. Chen, Z. X. Shen*

*Corresponding author for this work

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14 Scopus citations


A refractory-metal-free C40 TiSi 2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi 2 has a hexagonal structure with the space group P6 2 22(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi 2 can be directly achieved from C40 TiSi 2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi 2 into the subquarter micron region in semiconductor device fabrication.

Original languageEnglish (US)
Pages (from-to)3989-3991
Number of pages3
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 18 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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