Ideality factor and barrier height for a GaN nanomembrane electrically contacted with a tungsten nano-tip in a TEM

M. Benaissa; R. El Bouayadi; D. Ihiawakrim; O. Ersen

doi:10.1063/1.5128868

Ideality factor and barrier height for a GaN nanomembrane electrically contacted with a tungsten nano-tip in a TEM

M. Benaissa, R. El Bouayadi, D. Ihiawakrim, O. Ersen

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Abstract

In the present article, the electrical characteristics of a freestanding gallium nitride nanomembrane in contact with a tungsten nanoprobe are evaluated using scanning tunneling microscopy in an aberration-corrected transmission electron microscope without any lithographic patterning. We report here barrier height (ΦB=0.33±0.05eV and ideality factor (ηW/GaN−NM=1.620±0.07) parameters as extracted from I–V characteristic curve. Our experimental findings, combined with analytical calculations, show that the use of nanosized edge contacts results in a reduced barrier height, which is very promising for achieving a high ‘on’ current, large photoresponse, and high-frequency operation in FET devices.

Original language	English (US)
Pages (from-to)	075109
Journal	Journal of Applied Physics
Volume	127
Issue number	7
DOIs	https://doi.org/10.1063/1.5128868
State	Published - Feb 19 2020
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: M.B. gratefully acknowledges technical support provided by IPCMS Institute and Professor B. Ooi (KAUST University) for providing GaN samples.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1063/1.5128868

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title = "Ideality factor and barrier height for a GaN nanomembrane electrically contacted with a tungsten nano-tip in a TEM",

abstract = "In the present article, the electrical characteristics of a freestanding gallium nitride nanomembrane in contact with a tungsten nanoprobe are evaluated using scanning tunneling microscopy in an aberration-corrected transmission electron microscope without any lithographic patterning. We report here barrier height (ΦB=0.33±0.05eV and ideality factor (ηW/GaN−NM=1.620±0.07) parameters as extracted from I–V characteristic curve. Our experimental findings, combined with analytical calculations, show that the use of nanosized edge contacts results in a reduced barrier height, which is very promising for achieving a high {\textquoteleft}on{\textquoteright} current, large photoresponse, and high-frequency operation in FET devices.",

author = "M. Benaissa and {El Bouayadi}, R. and D. Ihiawakrim and O. Ersen",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: M.B. gratefully acknowledges technical support provided by IPCMS Institute and Professor B. Ooi (KAUST University) for providing GaN samples. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1063/1.5128868",

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T1 - Ideality factor and barrier height for a GaN nanomembrane electrically contacted with a tungsten nano-tip in a TEM

AU - Benaissa, M.

AU - El Bouayadi, R.

AU - Ihiawakrim, D.

AU - Ersen, O.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: M.B. gratefully acknowledges technical support provided by IPCMS Institute and Professor B. Ooi (KAUST University) for providing GaN samples. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2020/2/19

Y1 - 2020/2/19

N2 - In the present article, the electrical characteristics of a freestanding gallium nitride nanomembrane in contact with a tungsten nanoprobe are evaluated using scanning tunneling microscopy in an aberration-corrected transmission electron microscope without any lithographic patterning. We report here barrier height (ΦB=0.33±0.05eV and ideality factor (ηW/GaN−NM=1.620±0.07) parameters as extracted from I–V characteristic curve. Our experimental findings, combined with analytical calculations, show that the use of nanosized edge contacts results in a reduced barrier height, which is very promising for achieving a high ‘on’ current, large photoresponse, and high-frequency operation in FET devices.

AB - In the present article, the electrical characteristics of a freestanding gallium nitride nanomembrane in contact with a tungsten nanoprobe are evaluated using scanning tunneling microscopy in an aberration-corrected transmission electron microscope without any lithographic patterning. We report here barrier height (ΦB=0.33±0.05eV and ideality factor (ηW/GaN−NM=1.620±0.07) parameters as extracted from I–V characteristic curve. Our experimental findings, combined with analytical calculations, show that the use of nanosized edge contacts results in a reduced barrier height, which is very promising for achieving a high ‘on’ current, large photoresponse, and high-frequency operation in FET devices.

UR - http://hdl.handle.net/10754/661641

UR - http://aip.scitation.org/doi/10.1063/1.5128868

U2 - 10.1063/1.5128868

DO - 10.1063/1.5128868

M3 - Article

SN - 0021-8979

VL - 127

SP - 075109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Ideality factor and barrier height for a GaN nanomembrane electrically contacted with a tungsten nano-tip in a TEM

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