In the present article, the electrical characteristics of a freestanding gallium nitride nanomembrane in contact with a tungsten nanoprobe are evaluated using scanning tunneling microscopy in an aberration-corrected transmission electron microscope without any lithographic patterning. We report here barrier height (ΦB=0.33±0.05eV and ideality factor (ηW/GaN−NM=1.620±0.07) parameters as extracted from I–V characteristic curve. Our experimental findings, combined with analytical calculations, show that the use of nanosized edge contacts results in a reduced barrier height, which is very promising for achieving a high ‘on’ current, large photoresponse, and high-frequency operation in FET devices.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: M.B. gratefully acknowledges technical support provided by IPCMS Institute and Professor B. Ooi (KAUST University) for providing GaN samples.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.