Hysteresis and Its Correlation to Ionic Defects in Perovskite Solar Cells

Sandhya Tammireddy; Muhammad N. Lintangpradipto; Oscar Telschow; Moritz H. Futscher; Bruno Ehrler; Osman M. Bakr; Yana Vaynzof; Carsten Deibel

doi:10.1021/acs.jpclett.3c03146

Hysteresis and Its Correlation to Ionic Defects in Perovskite Solar Cells

Sandhya Tammireddy, Muhammad N. Lintangpradipto, Oscar Telschow, Moritz H. Futscher, Bruno Ehrler, Osman M. Bakr, Yana Vaynzof, Carsten Deibel^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Ion migration has been reported to be one of the main reasons for hysteresis in the current-voltage (J-V) characteristics of perovskite solar cells. We investigate the interplay between ionic conduction and hysteresis types by studying Cs_0.05(FA_0.83MA_0.17)_0.95Pb(I_0.9Br_0.1)₃ triple-cation perovskite solar cells through a combination of impedance spectroscopy (IS) and sweep-rate-dependent J-V curves. By comparing polycrystalline devices to single-crystal MAPbI₃ devices, we separate two defects, β and γ, both originating from long-range ionic conduction in the bulk. Defect β is associated with a dielectric relaxation, while the migration of γ is influenced by the perovskite/hole transport layer interface. These conduction types are the causes of different types of hysteresis in J-V curves. The accumulation of ionic defects at the transport layer is the dominant cause for observing tunnel-diode-like characteristics in the J-V curves. By comparing devices with interface modifications at the electron and hole transport layers, we discuss the species and polarity of involved defects.

Original language	English (US)
Pages (from-to)	1363-1372
Number of pages	10
Journal	Journal of Physical Chemistry Letters
Volume	15
Issue number	5
DOIs	https://doi.org/10.1021/acs.jpclett.3c03146
State	Published - Feb 8 2024

Bibliographical note

Publisher Copyright:
© 2024 The Authors. Published by American Chemical Society.

ASJC Scopus subject areas

General Materials Science
Physical and Theoretical Chemistry

Access to Document

10.1021/acs.jpclett.3c03146

Cite this

@article{06ced97e0fc44c36afe5fa8d8484d46e,

title = "Hysteresis and Its Correlation to Ionic Defects in Perovskite Solar Cells",

abstract = "Ion migration has been reported to be one of the main reasons for hysteresis in the current-voltage (J-V) characteristics of perovskite solar cells. We investigate the interplay between ionic conduction and hysteresis types by studying Cs0.05(FA0.83MA0.17)0.95Pb(I0.9Br0.1)3 triple-cation perovskite solar cells through a combination of impedance spectroscopy (IS) and sweep-rate-dependent J-V curves. By comparing polycrystalline devices to single-crystal MAPbI3 devices, we separate two defects, β and γ, both originating from long-range ionic conduction in the bulk. Defect β is associated with a dielectric relaxation, while the migration of γ is influenced by the perovskite/hole transport layer interface. These conduction types are the causes of different types of hysteresis in J-V curves. The accumulation of ionic defects at the transport layer is the dominant cause for observing tunnel-diode-like characteristics in the J-V curves. By comparing devices with interface modifications at the electron and hole transport layers, we discuss the species and polarity of involved defects.",

author = "Sandhya Tammireddy and Lintangpradipto, {Muhammad N.} and Oscar Telschow and Futscher, {Moritz H.} and Bruno Ehrler and Bakr, {Osman M.} and Yana Vaynzof and Carsten Deibel",

note = "Publisher Copyright: {\textcopyright} 2024 The Authors. Published by American Chemical Society.",

year = "2024",

month = feb,

day = "8",

doi = "10.1021/acs.jpclett.3c03146",

language = "English (US)",

volume = "15",

pages = "1363--1372",

journal = "Journal of Physical Chemistry Letters",

issn = "1948-7185",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Hysteresis and Its Correlation to Ionic Defects in Perovskite Solar Cells

AU - Tammireddy, Sandhya

AU - Lintangpradipto, Muhammad N.

AU - Telschow, Oscar

AU - Futscher, Moritz H.

AU - Ehrler, Bruno

AU - Bakr, Osman M.

AU - Vaynzof, Yana

AU - Deibel, Carsten

PY - 2024/2/8

Y1 - 2024/2/8

N2 - Ion migration has been reported to be one of the main reasons for hysteresis in the current-voltage (J-V) characteristics of perovskite solar cells. We investigate the interplay between ionic conduction and hysteresis types by studying Cs0.05(FA0.83MA0.17)0.95Pb(I0.9Br0.1)3 triple-cation perovskite solar cells through a combination of impedance spectroscopy (IS) and sweep-rate-dependent J-V curves. By comparing polycrystalline devices to single-crystal MAPbI3 devices, we separate two defects, β and γ, both originating from long-range ionic conduction in the bulk. Defect β is associated with a dielectric relaxation, while the migration of γ is influenced by the perovskite/hole transport layer interface. These conduction types are the causes of different types of hysteresis in J-V curves. The accumulation of ionic defects at the transport layer is the dominant cause for observing tunnel-diode-like characteristics in the J-V curves. By comparing devices with interface modifications at the electron and hole transport layers, we discuss the species and polarity of involved defects.

AB - Ion migration has been reported to be one of the main reasons for hysteresis in the current-voltage (J-V) characteristics of perovskite solar cells. We investigate the interplay between ionic conduction and hysteresis types by studying Cs0.05(FA0.83MA0.17)0.95Pb(I0.9Br0.1)3 triple-cation perovskite solar cells through a combination of impedance spectroscopy (IS) and sweep-rate-dependent J-V curves. By comparing polycrystalline devices to single-crystal MAPbI3 devices, we separate two defects, β and γ, both originating from long-range ionic conduction in the bulk. Defect β is associated with a dielectric relaxation, while the migration of γ is influenced by the perovskite/hole transport layer interface. These conduction types are the causes of different types of hysteresis in J-V curves. The accumulation of ionic defects at the transport layer is the dominant cause for observing tunnel-diode-like characteristics in the J-V curves. By comparing devices with interface modifications at the electron and hole transport layers, we discuss the species and polarity of involved defects.

UR - http://www.scopus.com/inward/record.url?scp=85184666276&partnerID=8YFLogxK

U2 - 10.1021/acs.jpclett.3c03146

DO - 10.1021/acs.jpclett.3c03146

M3 - Article

C2 - 38286839

AN - SCOPUS:85184666276

SN - 1948-7185

VL - 15

SP - 1363

EP - 1372

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 5

ER -

Hysteresis and Its Correlation to Ionic Defects in Perovskite Solar Cells

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this