Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

Zhenwei Wang, Xin He, Xixiang Zhang, Husam N. Alshareef

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62 Scopus citations


A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
Original languageEnglish (US)
Pages (from-to)9133-9141
Number of pages9
JournalAdvanced Materials
Issue number41
StatePublished - Aug 30 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Z.W. and X.H. contributed equally to this work. H.N.A. and X.X.Z. designed the work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).


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