Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

Zhenwei Wang, Xin He, Xixiang Zhang, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
Original languageEnglish (US)
Pages (from-to)9133-9141
Number of pages9
JournalAdvanced Materials
Volume28
Issue number41
DOIs
StatePublished - Aug 30 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Z.W. and X.H. contributed equally to this work. H.N.A. and X.X.Z. designed the work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).

Fingerprint

Dive into the research topics of 'Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2'. Together they form a unique fingerprint.

Cite this