Hybrid tunnel junction contacts to III–nitride light-emitting diodes

Erin C. Young; Benjamin P. Yonkee; Feng Wu; Sang Ho Oh; Steven P. DenBaars; Shuji Nakamura; James S. Speck

doi:10.7567/apex.9.022102

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

Erin C. Young, Benjamin P. Yonkee, Feng Wu, Sang Ho Oh, Steven P. DenBaars, Shuji Nakamura, James S. Speck

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Abstract

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\bar{2}\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Original language	English (US)
Pages (from-to)	022102
Journal	Applied Physics Express
Volume	9
Issue number	2
DOIs	https://doi.org/10.7567/apex.9.022102
State	Published - Jan 26 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara. The work was also funded in part through the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Hybrid tunnel junction contacts to III–nitride light-emitting diodes",

abstract = "In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\bar{2}\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.",

author = "Young, {Erin C.} and Yonkee, {Benjamin P.} and Feng Wu and Oh, {Sang Ho} and DenBaars, {Steven P.} and Shuji Nakamura and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara. The work was also funded in part through the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.7567/apex.9.022102",

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T1 - Hybrid tunnel junction contacts to III–nitride light-emitting diodes

AU - Young, Erin C.

AU - Yonkee, Benjamin P.

AU - Wu, Feng

AU - Oh, Sang Ho

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara. The work was also funded in part through the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/1/26

Y1 - 2016/1/26

N2 - In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\bar{2}\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

AB - In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\bar{2}\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

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U2 - 10.7567/apex.9.022102

DO - 10.7567/apex.9.022102

M3 - Article

SN - 1882-0778

VL - 9

SP - 022102

JO - Applied Physics Express

JF - Applied Physics Express

IS - 2

ER -

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

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