Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Min Cheng Chen; Chia Yi Lin; Kai Hsin Li; Lain-Jong Li; Chang Hsiao Chen; Cheng Hao Chuang; Ming Dao Lee; Yi Ju Chen; Yun Fang Hou; Chang Hsien Lin; Chun Chi Chen; Bo Wei Wu; Cheng San Wu; Ivy Yang; Yao Jen Lee; Wen Kuan Yeh; Tahui Wang; Fu Liang Yang; Chenming Hu

doi:10.1109/iedm.2014.7047163

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

Min Cheng Chen, Chia Yi Lin, Kai Hsin Li, Lain-Jong Li, Chang Hsiao Chen, Cheng Hao Chuang, Ming Dao Lee, Yi Ju Chen, Yun Fang Hou, Chang Hsien Lin, Chun Chi Chen, Bo Wei Wu, Cheng San Wu, Ivy Yang, Yao Jen Lee, Wen Kuan Yeh, Tahui Wang, Fu Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

Original language	English (US)
Title of host publication	2014 IEEE International Electron Devices Meeting
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	33.5.1-33.5.4
Number of pages	1
ISBN (Print)	9781479980017
DOIs	https://doi.org/10.1109/iedm.2014.7047163
State	Published - Dec 2014

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Chen, M. C., Lin, C. Y., Li, K. H., Li, L.-J., Chen, C. H., Chuang, C. H., Lee, M. D., Chen, Y. J., Hou, Y. F., Lin, C. H., Chen, C. C., Wu, B. W., Wu, C. S., Yang, I., Lee, Y. J., Yeh, W. K., Wang, T., Yang, F. L., & Hu, C. (2014). Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs. In 2014 IEEE International Electron Devices Meeting (pp. 33.5.1-33.5.4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/iedm.2014.7047163

@inproceedings{b11422afa1f54f77b8de8b04e8295cdf,

title = "Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs",

abstract = "Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. {\textcopyright} 2014 IEEE.",

author = "Chen, {Min Cheng} and Lin, {Chia Yi} and Li, {Kai Hsin} and Lain-Jong Li and Chen, {Chang Hsiao} and Chuang, {Cheng Hao} and Lee, {Ming Dao} and Chen, {Yi Ju} and Hou, {Yun Fang} and Lin, {Chang Hsien} and Chen, {Chun Chi} and Wu, {Bo Wei} and Wu, {Cheng San} and Ivy Yang and Lee, {Yao Jen} and Yeh, {Wen Kuan} and Tahui Wang and Yang, {Fu Liang} and Chenming Hu",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2014",

month = dec,

doi = "10.1109/iedm.2014.7047163",

language = "English (US)",

isbn = "9781479980017",

pages = "33.5.1--33.5.4",

booktitle = "2014 IEEE International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Chen, MC, Lin, CY, Li, KH, Li, L-J, Chen, CH, Chuang, CH, Lee, MD, Chen, YJ, Hou, YF, Lin, CH, Chen, CC, Wu, BW, Wu, CS, Yang, I, Lee, YJ, Yeh, WK, Wang, T, Yang, FL & Hu, C 2014, Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs. in 2014 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers (IEEE), pp. 33.5.1-33.5.4. https://doi.org/10.1109/iedm.2014.7047163

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs. / Chen, Min Cheng; Lin, Chia Yi; Li, Kai Hsin et al.
2014 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 33.5.1-33.5.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

AU - Chen, Min Cheng

AU - Lin, Chia Yi

AU - Li, Kai Hsin

AU - Li, Lain-Jong

AU - Chen, Chang Hsiao

AU - Chuang, Cheng Hao

AU - Lee, Ming Dao

AU - Chen, Yi Ju

AU - Hou, Yun Fang

AU - Lin, Chang Hsien

AU - Chen, Chun Chi

AU - Wu, Bo Wei

AU - Wu, Cheng San

AU - Yang, Ivy

AU - Lee, Yao Jen

AU - Yeh, Wen Kuan

AU - Wang, Tahui

AU - Yang, Fu Liang

AU - Hu, Chenming

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/12

Y1 - 2014/12

N2 - Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

AB - Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

UR - http://hdl.handle.net/10754/594212

UR - http://ieeexplore.ieee.org/document/7047163/

UR - http://www.scopus.com/inward/record.url?scp=84938283104&partnerID=8YFLogxK

U2 - 10.1109/iedm.2014.7047163

DO - 10.1109/iedm.2014.7047163

M3 - Conference contribution

SN - 9781479980017

SP - 33.5.1-33.5.4

BT - 2014 IEEE International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

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