Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic light-emitting diode displays. Commercial devices currently rely on metal oxides processed via physical vapour deposition methods, but the use of solution-based processes could provide a simpler, higher-throughput approach that would be more cost effective. However, creating oxide transistors with high carrier mobility and bias-stable operation using such processes has proved challenging. Here we show that transistors with high electron mobility (50 cm2 V−1 s−1) and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide. Insertion of the ozone-treated polystyrene interlayer passivates electron traps in the channel and reduces bias-induced instability during continuous transistor operation over a period of 24 h and under a high electric-field flux density (2.1 × 10−6 C cm−2). Furthermore, incorporation of the pre-synthesized aluminium-doped zinc oxide nanoparticles enables controlled n-type doping of the hybrid channels, providing additional control over the operating characteristics of the transistors.
KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Y.-H.L., H.F., D.K. and T.D.A. are grateful to the European Research Council (ERC) AMPRO project no. 280221 for financial support. N.A.H. and T.D.A. are grateful to the European Research Council (ERC) Marie Sklodowska-Curie grant no. 661127 for financial support. The authors thank King Abdullah University of Science and Technology (KAUST) for financial support and for facilitating access to the Core Laboratories. L.T. acknowledges support for the computational time granted from GRNET in the National HPC facility—ARIS—under project STEM-2.