Abstract
An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.
Original language | English (US) |
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Pages (from-to) | 3952-3959 |
Number of pages | 8 |
Journal | Advanced Materials |
Volume | 28 |
Issue number | 20 |
DOIs | |
State | Published - Oct 5 2015 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: European Research Council (ERC) AMPRO[280221]