Hybrid dual gate ferroelectric memory for multilevel information storage

Yasser Khan; Jesus Alfonso Caraveo-Frescas; Husam N. Alshareef

doi:10.1016/j.orgel.2014.10.034

Hybrid dual gate ferroelectric memory for multilevel information storage

Yasser Khan, Jesus Alfonso Caraveo-Frescas, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

Original language	English (US)
Pages (from-to)	9-17
Number of pages	9
Journal	Organic Electronics
Volume	16
DOIs	https://doi.org/10.1016/j.orgel.2014.10.034
State	Published - Jan 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.

ASJC Scopus subject areas

Materials Chemistry
Biomaterials
General Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1016/j.orgel.2014.10.034

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title = "Hybrid dual gate ferroelectric memory for multilevel information storage",

abstract = "Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.",

author = "Yasser Khan and Caraveo-Frescas, {Jesus Alfonso} and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.",

year = "2015",

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doi = "10.1016/j.orgel.2014.10.034",

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T1 - Hybrid dual gate ferroelectric memory for multilevel information storage

AU - Khan, Yasser

AU - Caraveo-Frescas, Jesus Alfonso

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.

PY - 2015/1

Y1 - 2015/1

N2 - Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

AB - Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

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UR - https://linkinghub.elsevier.com/retrieve/pii/S1566119914004868

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DO - 10.1016/j.orgel.2014.10.034

M3 - Article

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VL - 16

SP - 9

EP - 17

JO - Organic Electronics

JF - Organic Electronics

ER -

Hybrid dual gate ferroelectric memory for multilevel information storage

Abstract

Bibliographical note

ASJC Scopus subject areas

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