Hybrid dual gate ferroelectric memory for multilevel information storage

Yasser Khan, Jesus Alfonso Caraveo-Frescas, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.
Original languageEnglish (US)
Pages (from-to)9-17
Number of pages9
JournalOrganic Electronics
StatePublished - Jan 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.

ASJC Scopus subject areas

  • Materials Chemistry
  • Biomaterials
  • General Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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