Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Ivan Isakov; Alexandra F. Paterson; Olga Solomeshch; Nir Tessler; Qiang Zhang; Jun Li; Xixiang Zhang; Zhuping Fei; Martin Heeney; Thomas D. Anthopoulos

doi:10.1063/1.4972988

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

Ivan Isakov, Alexandra F. Paterson, Olga Solomeshch, Nir Tessler, Qiang Zhang, Jun Li, Xixiang Zhang, Zhuping Fei, Martin Heeney, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

Original language	English (US)
Pages (from-to)	263301
Journal	Applied Physics Letters
Volume	109
Issue number	26
DOIs	https://doi.org/10.1063/1.4972988
State	Published - Dec 29 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: T.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.

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10.1063/1.4972988

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title = "Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs",

abstract = "We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.",

author = "Ivan Isakov and Paterson, {Alexandra F.} and Olga Solomeshch and Nir Tessler and Qiang Zhang and Jun Li and Xixiang Zhang and Zhuping Fei and Martin Heeney and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: T.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.",

year = "2016",

month = dec,

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doi = "10.1063/1.4972988",

language = "English (US)",

volume = "109",

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journal = "Applied Physics Letters",

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T1 - Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

AU - Isakov, Ivan

AU - Paterson, Alexandra F.

AU - Solomeshch, Olga

AU - Tessler, Nir

AU - Zhang, Qiang

AU - Li, Jun

AU - Zhang, Xixiang

AU - Fei, Zhuping

AU - Heeney, Martin

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: T.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.

PY - 2016/12/29

Y1 - 2016/12/29

N2 - We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

AB - We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

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U2 - 10.1063/1.4972988

DO - 10.1063/1.4972988

M3 - Article

SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

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