How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse?

Md Hasan Raza Ansari; Nazek El-Atab

doi:10.23919/SISPAD57422.2023.10319628

How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse?

Md Hasan Raza Ansari^*, Nazek El-Atab

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the charge trapping-based Gate All Around Transistor (GAA) technology is utilized for the artificial synapse due to its superior performance in terms of low power consumption and high speed. The controlling of state transformation of electronic synapses from short-term potentiation (STP) to long-term potentiation (LTP) is crucial. We have investigated the effect of metal gate workfunction and channel doping on state transformation by using a feedback mechanism (impact ionization). This mechanism regulates channel potentiation and the level of charge trapping in the nitride layer. Our simulation results indicate that this approach can effectively control the STP to LTP transition, while also achieving long STP retention and better dynamic range. This study presents a promising direction for developing advanced electronic devices based on charge-trapping-based GAA transistors.

Original language	English (US)
Title of host publication	2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	217-220
Number of pages	4
ISBN (Electronic)	9784863488038
DOIs	https://doi.org/10.23919/SISPAD57422.2023.10319628
State	Published - 2023
Event	2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 - Kobe, Japan Duration: Sep 27 2023 → Sep 29 2023

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023
Country/Territory	Japan
City	Kobe
Period	09/27/23 → 09/29/23

Bibliographical note

Publisher Copyright:
© 2023 The Japan Society of Applied Physics.

Keywords

Charge Trapping Memory
Long-Term Memory
LTP
NSFET
Short-Term Memory
STP
Synapse features

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.23919/SISPAD57422.2023.10319628

Cite this

Ansari, M. H. R., & El-Atab, N. (2023). How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse? In 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 (pp. 217-220). (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD57422.2023.10319628

Ansari, Md Hasan Raza ; El-Atab, Nazek. / How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse?. 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 217-220 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse?",

abstract = "In this work, the charge trapping-based Gate All Around Transistor (GAA) technology is utilized for the artificial synapse due to its superior performance in terms of low power consumption and high speed. The controlling of state transformation of electronic synapses from short-term potentiation (STP) to long-term potentiation (LTP) is crucial. We have investigated the effect of metal gate workfunction and channel doping on state transformation by using a feedback mechanism (impact ionization). This mechanism regulates channel potentiation and the level of charge trapping in the nitride layer. Our simulation results indicate that this approach can effectively control the STP to LTP transition, while also achieving long STP retention and better dynamic range. This study presents a promising direction for developing advanced electronic devices based on charge-trapping-based GAA transistors.",

keywords = "Charge Trapping Memory, Long-Term Memory, LTP, NSFET, Short-Term Memory, STP, Synapse features",

author = "Ansari, {Md Hasan Raza} and Nazek El-Atab",

note = "Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.; 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 ; Conference date: 27-09-2023 Through 29-09-2023",

year = "2023",

doi = "10.23919/SISPAD57422.2023.10319628",

language = "English (US)",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "217--220",

booktitle = "2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023",

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}

Ansari, MHR & El-Atab, N 2023, How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse? in 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 217-220, 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023, Kobe, Japan, 09/27/23. https://doi.org/10.23919/SISPAD57422.2023.10319628

How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse? / Ansari, Md Hasan Raza ; El-Atab, Nazek.
2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 217-220 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review