Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: Role of substrate coupling

Fan Hung Liu; Shun Tsung Lo; Chiashain Chuang; Tak Pong Woo; Hsin Yen Lee; Chieh Wen Liu; Chieh I. Liu; Lung I. Huang; Cheng Hua Liu; Yanfei Yang; Chih Yuan S. Chang; Lain Jong Li; Patrick C. Mende; Randall M. Feenstra; Randolph E. Elmquist; Chi Te Liang

doi:10.1039/c4nr02980a

Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: Role of substrate coupling

Fan Hung Liu, Shun Tsung Lo^*, Chiashain Chuang, Tak Pong Woo, Hsin Yen Lee, Chieh Wen Liu, Chieh I. Liu, Lung I. Huang, Cheng Hua Liu, Yanfei Yang, Chih Yuan S. Chang, Lain Jong Li, Patrick C. Mende, Randall M. Feenstra, Randolph E. Elmquist, Chi Te Liang

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we have demonstrated that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting application of epitaxial graphene in high-frequency devices which require outstanding heat exchange with an outside cooling source.

Original language	English (US)
Pages (from-to)	10562-10568
Number of pages	7
Journal	Nanoscale
Volume	6
Issue number	18
DOIs	https://doi.org/10.1039/c4nr02980a
State	Published - Sep 21 2014

ASJC Scopus subject areas

General Materials Science

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Liu, F. H., Lo, S. T., Chuang, C., Woo, T. P., Lee, H. Y., Liu, C. W., Liu, C. I., Huang, L. I., Liu, C. H., Yang, Y., Chang, C. Y. S., Li, L. J., Mende, P. C., Feenstra, R. M., Elmquist, R. E., & Liang, C. T. (2014). Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: Role of substrate coupling. Nanoscale, 6(18), 10562-10568. https://doi.org/10.1039/c4nr02980a

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title = "Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: Role of substrate coupling",

abstract = "The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we have demonstrated that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting application of epitaxial graphene in high-frequency devices which require outstanding heat exchange with an outside cooling source.",

author = "Liu, {Fan Hung} and Lo, {Shun Tsung} and Chiashain Chuang and Woo, {Tak Pong} and Lee, {Hsin Yen} and Liu, {Chieh Wen} and Liu, {Chieh I.} and Huang, {Lung I.} and Liu, {Cheng Hua} and Yanfei Yang and Chang, {Chih Yuan S.} and Li, {Lain Jong} and Mende, {Patrick C.} and Feenstra, {Randall M.} and Elmquist, {Randolph E.} and Liang, {Chi Te}",

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month = sep,

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doi = "10.1039/c4nr02980a",

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T1 - Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation

T2 - Role of substrate coupling

AU - Liu, Fan Hung

AU - Lo, Shun Tsung

AU - Chuang, Chiashain

AU - Woo, Tak Pong

AU - Lee, Hsin Yen

AU - Liu, Chieh Wen

AU - Liu, Chieh I.

AU - Huang, Lung I.

AU - Liu, Cheng Hua

AU - Yang, Yanfei

AU - Chang, Chih Yuan S.

AU - Li, Lain Jong

AU - Mende, Patrick C.

AU - Feenstra, Randall M.

AU - Elmquist, Randolph E.

AU - Liang, Chi Te

PY - 2014/9/21

Y1 - 2014/9/21

N2 - The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we have demonstrated that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting application of epitaxial graphene in high-frequency devices which require outstanding heat exchange with an outside cooling source.

AB - The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we have demonstrated that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting application of epitaxial graphene in high-frequency devices which require outstanding heat exchange with an outside cooling source.

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U2 - 10.1039/c4nr02980a

DO - 10.1039/c4nr02980a

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AN - SCOPUS:84906542537

SN - 2040-3364

VL - 6

SP - 10562

EP - 10568

JO - Nanoscale

JF - Nanoscale

IS - 18

ER -

Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: Role of substrate coupling

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