Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

H. Wenisch; M. Fehrer; M. Klude; A. Isemann; V. Großmann; H. Heinke; K. Ohkawa; D. Hommel; M. Prokesch; U. Rinas; H. Hartmann

doi:10.1016/S0022-0248(98)01495-X

Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

H. Wenisch^*, M. Fehrer, M. Klude, A. Isemann, V. Großmann, H. Heinke, K. Ohkawa, D. Hommel, M. Prokesch, U. Rinas, H. Hartmann

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The different steps of ZnSe substrate preparation are described. In situ hydrogen plasma cleaning to get rid of contaminations like thermally stable oxides on ZnSe substrate surfaces before growth is the crucial point to fabricate reproducibly pseudomorphic (Mg,Zn) (S,Se) layers. It is found that the crystalline quality of the layers depends strongly on that of the ZnSe substrates itself as well as on the initial growth start conditions. Finally, ZnSe-based laser diodes were grown on insulating and different kinds of conducting ZnSe substrates. They operated at room temperature under pulsed conditions.

Original language	English (US)
Pages (from-to)	933-937
Number of pages	5
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(98)01495-X
State	Published - May 1999
Externally published	Yes
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: Aug 31 1998 → Sep 4 1998

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)01495-X

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title = "Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates",

abstract = "The different steps of ZnSe substrate preparation are described. In situ hydrogen plasma cleaning to get rid of contaminations like thermally stable oxides on ZnSe substrate surfaces before growth is the crucial point to fabricate reproducibly pseudomorphic (Mg,Zn) (S,Se) layers. It is found that the crystalline quality of the layers depends strongly on that of the ZnSe substrates itself as well as on the initial growth start conditions. Finally, ZnSe-based laser diodes were grown on insulating and different kinds of conducting ZnSe substrates. They operated at room temperature under pulsed conditions.",

author = "H. Wenisch and M. Fehrer and M. Klude and A. Isemann and V. Gro{\ss}mann and H. Heinke and K. Ohkawa and D. Hommel and M. Prokesch and U. Rinas and H. Hartmann",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01495-X",

language = "English (US)",

volume = "201",

pages = "933--937",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",

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TY - JOUR

T1 - Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

AU - Wenisch, H.

AU - Fehrer, M.

AU - Klude, M.

AU - Isemann, A.

AU - Großmann, V.

AU - Heinke, H.

AU - Ohkawa, K.

AU - Hommel, D.

AU - Prokesch, M.

AU - Rinas, U.

AU - Hartmann, H.

PY - 1999/5

Y1 - 1999/5

N2 - The different steps of ZnSe substrate preparation are described. In situ hydrogen plasma cleaning to get rid of contaminations like thermally stable oxides on ZnSe substrate surfaces before growth is the crucial point to fabricate reproducibly pseudomorphic (Mg,Zn) (S,Se) layers. It is found that the crystalline quality of the layers depends strongly on that of the ZnSe substrates itself as well as on the initial growth start conditions. Finally, ZnSe-based laser diodes were grown on insulating and different kinds of conducting ZnSe substrates. They operated at room temperature under pulsed conditions.

AB - The different steps of ZnSe substrate preparation are described. In situ hydrogen plasma cleaning to get rid of contaminations like thermally stable oxides on ZnSe substrate surfaces before growth is the crucial point to fabricate reproducibly pseudomorphic (Mg,Zn) (S,Se) layers. It is found that the crystalline quality of the layers depends strongly on that of the ZnSe substrates itself as well as on the initial growth start conditions. Finally, ZnSe-based laser diodes were grown on insulating and different kinds of conducting ZnSe substrates. They operated at room temperature under pulsed conditions.

UR - http://www.scopus.com/inward/record.url?scp=0032680615&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)01495-X

DO - 10.1016/S0022-0248(98)01495-X

M3 - Conference article

AN - SCOPUS:0032680615

SN - 0022-0248

VL - 201

SP - 933

EP - 937

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)

Y2 - 31 August 1998 through 4 September 1998

ER -

Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

Abstract

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