Homoepitaxial growth of ZnSe on dry-etched substrates

K. Ohkawa; T. Karasawa; A. Yoshida; T. Hirao; T. Mitsuyu

doi:10.1063/1.101048

Homoepitaxial growth of ZnSe on dry-etched substrates

K. Ohkawa^*, T. Karasawa, A. Yoshida, T. Hirao, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl₃ gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as-polished substrates in photoluminescence (PL) measurements at 11 K. The low-temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free-exciton emission at 2.804 eV and a dominant donor-bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.

Original language	English (US)
Pages (from-to)	2553-2555
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	25
DOIs	https://doi.org/10.1063/1.101048
State	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Homoepitaxial growth of ZnSe on dry-etched substrates",

abstract = "High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as-polished substrates in photoluminescence (PL) measurements at 11 K. The low-temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free-exciton emission at 2.804 eV and a dominant donor-bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.",

author = "K. Ohkawa and T. Karasawa and A. Yoshida and T. Hirao and T. Mitsuyu",

year = "1989",

doi = "10.1063/1.101048",

language = "English (US)",

volume = "54",

pages = "2553--2555",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Homoepitaxial growth of ZnSe on dry-etched substrates

AU - Ohkawa, K.

AU - Karasawa, T.

AU - Yoshida, A.

AU - Hirao, T.

AU - Mitsuyu, T.

PY - 1989

Y1 - 1989

N2 - High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as-polished substrates in photoluminescence (PL) measurements at 11 K. The low-temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free-exciton emission at 2.804 eV and a dominant donor-bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.

AB - High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as-polished substrates in photoluminescence (PL) measurements at 11 K. The low-temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free-exciton emission at 2.804 eV and a dominant donor-bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.

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U2 - 10.1063/1.101048

DO - 10.1063/1.101048

M3 - Article

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SP - 2553

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Homoepitaxial growth of ZnSe on dry-etched substrates

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