Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Pradipta K. Nayak, Jesus Alfonso Caraveo-Frescas, Unnat Sampatraj Bhansali, Husam N. Alshareef

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High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.
Original languageEnglish (US)
Pages (from-to)253507
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 23 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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