Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Pradipta K. Nayak; Jesus Alfonso Caraveo-Frescas; Unnat Sampatraj Bhansali; Husam N. Alshareef

doi:10.1063/1.4729787

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Pradipta K. Nayak, Jesus Alfonso Caraveo-Frescas, Unnat Sampatraj Bhansali, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Original language	English (US)
Pages (from-to)	253507
Journal	Applied Physics Letters
Volume	100
Issue number	25
DOIs	https://doi.org/10.1063/1.4729787
State	Published - Jun 23 2012

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KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4729787

https://repository.kaust.edu.sa/bitstream/10754/552855/1/1.4729787.pdf

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title = "Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films",

abstract = "High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.",

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AU - Nayak, Pradipta K.

AU - Caraveo-Frescas, Jesus Alfonso

AU - Bhansali, Unnat Sampatraj

AU - Alshareef, Husam N.

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PY - 2012/6/23

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N2 - High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

AB - High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

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Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Abstract

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