Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

Chang-Hsiao Chen, Chun-Lan Wu, Jiang Pu, Ming-Hui Chiu, Pushpendra Kumar, Taishi Takenobu, Lain-Jong Li

Research output: Contribution to journalArticlepeer-review

138 Scopus citations


Tungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ~100 (cm2/Vs) and the near ideal subthreshold swing of ~60 mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.
Original languageEnglish (US)
Pages (from-to)034001
Journal2D Materials
Issue number3
StatePublished - Oct 28 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was supported by Academia Sinica, the National Science Council Taiwan,
AFOSR BRI and KAUST. TT was partially supported by a Waseda University Grant (2011A-
501) and the Funding Program for the Next Generation 90 of World-Leading Researchers.


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