Hole doped Dirac states in silicene by biaxial tensile strain

Thaneshwor P. Kaloni, Yingchun Cheng, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

118 Scopus citations


The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doped Dirac states because of weakened Si–Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.
Original languageEnglish (US)
Pages (from-to)104305
JournalJournal of Applied Physics
Issue number10
StatePublished - Mar 11 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • General Physics and Astronomy


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