Highly Tunable Electrostatic Nanomechanical Resonators

Syed N.R. Kazmi, Amal Z. Hajjaj, Md A.Al Hafiz, Pedro M.F.J. Costa, Mohammad I. Younis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


There has been significant interest toward highly tunable resonators for on-demand frequency selection in modern communication systems. Here, we report highly tunable electrostatically actuated silicon-based nanomechanical resonators. In-plane doubly clamped bridges, slightly curved as shallow arches due to residual stresses are fabricated using standard electron beam lithography and surface nanomachining. The resonators are designed such that the effect of midplane stretching dominates the softening effect of the electrostatic force. This is achieved by controlling the gap-to-thickness ratio and by exploiting the initial curvature of the structure from fabrication. We demonstrate considerable increase in the resonance frequency of nanoresonators with the dc bias voltages up to 108% for 180 nm thick structures with a transduction gap of 1 μm separating them from the driving/sensing electrodes. The experimental results are found in good agreement with those of a nonlinear analytical model based on the Euler-Bernoulli beam theory. As a potential application, we demonstrate a tunable narrow bandpass filter using two electrically coupled nanomechanical arch resonators with varied dc bias voltages.

Original languageEnglish (US)
Article number8119846
Pages (from-to)113-121
Number of pages9
JournalIEEE Transactions on Nanotechnology
Issue number1
StatePublished - Jan 2018

Bibliographical note

Publisher Copyright:
© 2017 IEEE.


  • Doubly clamped bridges
  • Electrostatic force
  • Nanomechanical resonator
  • Shallow arch
  • Tunability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications


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