Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3layer

Chuanju Wang; Yi Lu; Che Hao Liao; Shibin Chandroth; Saravanan Yuvaraja; Xiaohang Li

doi:10.35848/1347-4065/ac6a32

Highly suppressed interface traps of Al₂O₃/GaN through interposing a stoichiometric Ga₂O₃layer

Chuanju Wang, Yi Lu, Che Hao Liao, Shibin Chandroth, Saravanan Yuvaraja, Xiaohang Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.

Original language	English (US)
Article number	060906
Journal	Japanese Journal of Applied Physics
Volume	61
Issue number	6
DOIs	https://doi.org/10.35848/1347-4065/ac6a32
State	Published - Jun 1 2022

Bibliographical note

Publisher Copyright:
© 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.

Keywords

GaN HEMTs
interfacial state density
stoichiometric Ga2O3 interlayer

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.35848/1347-4065/ac6a32

Cite this

@article{071ddf93bdc84f188629952c1bd549cd,

title = "Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3layer",

abstract = "Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.",

keywords = "GaN HEMTs, interfacial state density, stoichiometric Ga2O3 interlayer",

author = "Chuanju Wang and Yi Lu and Liao, {Che Hao} and Shibin Chandroth and Saravanan Yuvaraja and Xiaohang Li",

note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.",

year = "2022",

month = jun,

day = "1",

doi = "10.35848/1347-4065/ac6a32",

language = "English (US)",

volume = "61",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3layer

AU - Wang, Chuanju

AU - Lu, Yi

AU - Liao, Che Hao

AU - Chandroth, Shibin

AU - Yuvaraja, Saravanan

AU - Li, Xiaohang

PY - 2022/6/1

Y1 - 2022/6/1

N2 - Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.

AB - Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.

KW - GaN HEMTs

KW - interfacial state density

KW - stoichiometric Ga2O3 interlayer

UR - http://www.scopus.com/inward/record.url?scp=85131690604&partnerID=8YFLogxK

U2 - 10.35848/1347-4065/ac6a32

DO - 10.35848/1347-4065/ac6a32

M3 - Article

AN - SCOPUS:85131690604

SN - 0021-4922

VL - 61

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6

M1 - 060906

ER -