Highly reduced anatase TiO2-δ thin films obtained via low-temperature reduction

Atsushi Kitada; Shigeru Kasahara; Takahito Terashima; Kazuyoshi Yoshimura; Yoji Kobayashi; Hiroshi Kageyama

doi:10.1143/APEX.4.035801

Highly reduced anatase TiO2-δ thin films obtained via low-temperature reduction

Atsushi Kitada, Shigeru Kasahara, Takahito Terashima, Kazuyoshi Yoshimura, Yoji Kobayashi, Hiroshi Kageyama

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report the preparation and physical properties of reduced anatase TiO2-δ thin films obtained via a low-temperature (low-T) reduction using CaH2. The oxygen amounts were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as 10-3 ωcm at room temperature, both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concentration of 1:6 × 1021 cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of δ. © 2011 The Japan Society of Applied Physics.

Original language	English (US)
Journal	Applied Physics Express
Volume	4
Issue number	3
DOIs	https://doi.org/10.1143/APEX.4.035801
State	Published - Mar 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2022-09-13

ASJC Scopus subject areas

General Physics and Astronomy
General Engineering

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title = "Highly reduced anatase TiO2-δ thin films obtained via low-temperature reduction",

abstract = "We report the preparation and physical properties of reduced anatase TiO2-δ thin films obtained via a low-temperature (low-T) reduction using CaH2. The oxygen amounts were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as 10-3 ωcm at room temperature, both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concentration of 1:6 × 1021 cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of δ. {\textcopyright} 2011 The Japan Society of Applied Physics.",

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T1 - Highly reduced anatase TiO2-δ thin films obtained via low-temperature reduction

AU - Kitada, Atsushi

AU - Kasahara, Shigeru

AU - Terashima, Takahito

AU - Yoshimura, Kazuyoshi

AU - Kobayashi, Yoji

AU - Kageyama, Hiroshi

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2011/3/1

Y1 - 2011/3/1

N2 - We report the preparation and physical properties of reduced anatase TiO2-δ thin films obtained via a low-temperature (low-T) reduction using CaH2. The oxygen amounts were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as 10-3 ωcm at room temperature, both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concentration of 1:6 × 1021 cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of δ. © 2011 The Japan Society of Applied Physics.

AB - We report the preparation and physical properties of reduced anatase TiO2-δ thin films obtained via a low-temperature (low-T) reduction using CaH2. The oxygen amounts were controlled in a wider range than ever reported. Some highly reduced anatase films showed resistivities as low as 10-3 ωcm at room temperature, both in metallic and semiconducting states. The most conducting metallic sample has very high carrier concentration of 1:6 × 1021 cm-3, comparable with those of metal-doped anatase films. Moreover, the magnetoresistance of the films changed its sign twice as a function of δ. © 2011 The Japan Society of Applied Physics.

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DO - 10.1143/APEX.4.035801

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JO - Applied Physics Express

JF - Applied Physics Express

IS - 3

ER -

Highly reduced anatase TiO2-δ thin films obtained via low-temperature reduction

Abstract

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