Highly Passivated n-Type Colloidal Quantum Dots for Solution-Processed Thermoelectric Generators with Large Output Voltage

Mohamad I. Nugraha; Hyunho Kim; Bin Sun; Saheena Desai; F. Pelayo Garcia de Arquer; Edward H. Sargent; Husam N. Alshareef; Derya Baran

doi:10.1002/aenm.201901244

Highly Passivated n-Type Colloidal Quantum Dots for Solution-Processed Thermoelectric Generators with Large Output Voltage

Mohamad I. Nugraha, Hyunho Kim, Bin Sun, Saheena Desai, F. Pelayo Garcia de Arquer, Edward H. Sargent, Husam N. Alshareef, Derya Baran

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low-cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p-type, while only a few reports are available on n-type films. High-performing n- and p-type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high-thermoelectric-performance n-type CQD films are reported and showcased in high-performance all-CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m−1 K−2, superior to previously reported n-type lead chalcogenide CQD films operating near room temperature (

Original language	English (US)
Pages (from-to)	1901244
Journal	Advanced Energy Materials
Volume	9
Issue number	28
DOIs	https://doi.org/10.1002/aenm.201901244
State	Published - Jun 26 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-CRG2018-3737
Acknowledgements: The authors would like to acknowledge Xinwei Guan for supporting XRD measurement. Figures 1a and 6a were created by Heno Hwang, a scientific illustrator at King Abdullah University of Science and Technology (KAUST). This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-CRG2018-3737.

Access to Document

10.1002/aenm.201901244

Cite this

@article{7325859a79964d4894f1245920c4ee53,

title = "Highly Passivated n-Type Colloidal Quantum Dots for Solution-Processed Thermoelectric Generators with Large Output Voltage",

abstract = "Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low-cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p-type, while only a few reports are available on n-type films. High-performing n- and p-type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high-thermoelectric-performance n-type CQD films are reported and showcased in high-performance all-CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m−1 K−2, superior to previously reported n-type lead chalcogenide CQD films operating near room temperature (",

author = "Nugraha, {Mohamad I.} and Hyunho Kim and Bin Sun and Saheena Desai and {de Arquer}, {F. Pelayo Garcia} and Sargent, {Edward H.} and Alshareef, {Husam N.} and Derya Baran",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): OSR-CRG2018-3737 Acknowledgements: The authors would like to acknowledge Xinwei Guan for supporting XRD measurement. Figures 1a and 6a were created by Heno Hwang, a scientific illustrator at King Abdullah University of Science and Technology (KAUST). This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-CRG2018-3737.",

year = "2019",

month = jun,

day = "26",

doi = "10.1002/aenm.201901244",

language = "English (US)",

volume = "9",

pages = "1901244",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "Wiley-VCH Verlag",

number = "28",

}

TY - JOUR

T1 - Highly Passivated n-Type Colloidal Quantum Dots for Solution-Processed Thermoelectric Generators with Large Output Voltage

AU - Nugraha, Mohamad I.

AU - Kim, Hyunho

AU - Sun, Bin

AU - Desai, Saheena

AU - de Arquer, F. Pelayo Garcia

AU - Sargent, Edward H.

AU - Alshareef, Husam N.

AU - Baran, Derya

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): OSR-CRG2018-3737 Acknowledgements: The authors would like to acknowledge Xinwei Guan for supporting XRD measurement. Figures 1a and 6a were created by Heno Hwang, a scientific illustrator at King Abdullah University of Science and Technology (KAUST). This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-CRG2018-3737.

PY - 2019/6/26

Y1 - 2019/6/26

N2 - Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low-cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p-type, while only a few reports are available on n-type films. High-performing n- and p-type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high-thermoelectric-performance n-type CQD films are reported and showcased in high-performance all-CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m−1 K−2, superior to previously reported n-type lead chalcogenide CQD films operating near room temperature (

AB - Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low-cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p-type, while only a few reports are available on n-type films. High-performing n- and p-type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high-thermoelectric-performance n-type CQD films are reported and showcased in high-performance all-CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m−1 K−2, superior to previously reported n-type lead chalcogenide CQD films operating near room temperature (

UR - http://hdl.handle.net/10754/656057

UR - http://doi.wiley.com/10.1002/aenm.201901244

UR - http://www.scopus.com/inward/record.url?scp=85068110492&partnerID=8YFLogxK

U2 - 10.1002/aenm.201901244

DO - 10.1002/aenm.201901244

M3 - Article

SN - 1614-6832

VL - 9

SP - 1901244

JO - Advanced Energy Materials

JF - Advanced Energy Materials

IS - 28

ER -

Highly Passivated n-Type Colloidal Quantum Dots for Solution-Processed Thermoelectric Generators with Large Output Voltage

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this