Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si

Daehwan Jung; Robert Herrick; Justin Norman; Catherine Jan; Neil Caranto; Alfredo Torres; Yating Wan; Arthur C. Gossard; John E. Bowers

Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si

Daehwan Jung, Robert Herrick, Justin Norman, Catherine Jan, Neil Caranto, Alfredo Torres, Yating Wan, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAs quantum dot Fabry-Perot lasers grown on on-axis (001) Si demonstrate record-low continuous-wave threshold current of 4.8 mA as well as excellent device reliability with extrapolated lifetimes more than ten million hours at 35 °C.

Original language	English (US)
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580422
State	Published - Aug 6 2018
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

Cite this

@inproceedings{026a7af59b5e4cb9a64a32111d8da570,

title = "Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si",

abstract = "InAs quantum dot Fabry-Perot lasers grown on on-axis (001) Si demonstrate record-low continuous-wave threshold current of 4.8 mA as well as excellent device reliability with extrapolated lifetimes more than ten million hours at 35 °C.",

author = "Daehwan Jung and Robert Herrick and Justin Norman and Catherine Jan and Neil Caranto and Alfredo Torres and Yating Wan and Gossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2018",

month = aug,

day = "6",

language = "English (US)",

isbn = "9781943580422",

booktitle = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si. / Jung, Daehwan; Herrick, Robert; Norman, Justin et al.
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si

AU - Jung, Daehwan

AU - Herrick, Robert

AU - Norman, Justin

AU - Jan, Catherine

AU - Caranto, Neil

AU - Torres, Alfredo

AU - Wan, Yating

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2018/8/6

Y1 - 2018/8/6

N2 - InAs quantum dot Fabry-Perot lasers grown on on-axis (001) Si demonstrate record-low continuous-wave threshold current of 4.8 mA as well as excellent device reliability with extrapolated lifetimes more than ten million hours at 35 °C.

AB - InAs quantum dot Fabry-Perot lasers grown on on-axis (001) Si demonstrate record-low continuous-wave threshold current of 4.8 mA as well as excellent device reliability with extrapolated lifetimes more than ten million hours at 35 °C.

UR - http://www.scopus.com/inward/record.url?scp=85052557034&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781943580422

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Highly Improved Reliability of Low Threshold 1.3 μm III/V Quantum Dot Laser Epitaxially Grown on On-axis Si

Abstract

Bibliographical note

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