Highly flexible MoS 2 thin-film transistors with ion gel dielectrics

Jiang Pu; Yohei Yomogida; Keng Ku Liu; Lain Jong Li; Yoshihiro Iwasa; Taishi Takenobu

doi:10.1021/nl301335q

Highly flexible MoS ₂ thin-film transistors with ion gel dielectrics

Jiang Pu, Yohei Yomogida, Keng Ku Liu, Lain Jong Li^*, Yoshihiro Iwasa, Taishi Takenobu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

771 Scopus citations

Abstract

Molybdenum disulfide (MoS ₂) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm ²/(V ·s)) and a high on/off current ratio (10 ⁵). Furthermore, the MoS ₂ transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS ₂ films make them suitable for use in large-area flexible electronics.

Original language	English (US)
Pages (from-to)	4013-4017
Number of pages	5
Journal	Nano Letters
Volume	12
Issue number	8
DOIs	https://doi.org/10.1021/nl301335q
State	Published - Aug 8 2012
Externally published	Yes

Keywords

Two-dimensional material
electric double-layer transistor
flexible electronics
molybdenum disulfide
transition metal dichalcogenide

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl301335q

Cite this

@article{93184711671b4b45ad96132a212f1b6f,

title = "Highly flexible MoS 2 thin-film transistors with ion gel dielectrics",

abstract = "Molybdenum disulfide (MoS 2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm 2/(V ·s)) and a high on/off current ratio (10 5). Furthermore, the MoS 2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS 2 films make them suitable for use in large-area flexible electronics.",

keywords = "Two-dimensional material, electric double-layer transistor, flexible electronics, molybdenum disulfide, transition metal dichalcogenide",

author = "Jiang Pu and Yohei Yomogida and Liu, {Keng Ku} and Li, {Lain Jong} and Yoshihiro Iwasa and Taishi Takenobu",

year = "2012",

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doi = "10.1021/nl301335q",

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AU - Pu, Jiang

AU - Yomogida, Yohei

AU - Liu, Keng Ku

AU - Li, Lain Jong

AU - Iwasa, Yoshihiro

AU - Takenobu, Taishi

PY - 2012/8/8

Y1 - 2012/8/8

N2 - Molybdenum disulfide (MoS 2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm 2/(V ·s)) and a high on/off current ratio (10 5). Furthermore, the MoS 2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS 2 films make them suitable for use in large-area flexible electronics.

AB - Molybdenum disulfide (MoS 2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm 2/(V ·s)) and a high on/off current ratio (10 5). Furthermore, the MoS 2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS 2 films make them suitable for use in large-area flexible electronics.

KW - Two-dimensional material

KW - electric double-layer transistor

KW - flexible electronics

KW - molybdenum disulfide

KW - transition metal dichalcogenide

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