Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

Jiang Pu; Kazuma Funahashi; Chang-Hsiao Chen; Ming-yang Li; Lain-Jong Li; Taishi Takenobu

doi:10.1002/adma.201503872

Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

Jiang Pu, Kazuma Funahashi, Chang-Hsiao Chen, Ming-yang Li, Lain-Jong Li, Taishi Takenobu

Research output: Contribution to journal › Article › peer-review

125 Scopus citations

Abstract

Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	4111-4119
Number of pages	9
Journal	Advanced Materials
Volume	28
Issue number	21
DOIs	https://doi.org/10.1002/adma.201503872
State	Published - Mar 23 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: T.T. was partially supported by the Funding Program for the Next Generation of World-Leading Researchers and Grants-in-Aid from MEXT (26107533 "Science of Atomic Layers" and 25000003 "Specially Promoted Research"). J.P. and K.F. was supported by the Leading Graduate Program in Science and Engineering, Waseda University from MEXT, and J.P. was also supported by the Research Fellowship for Young Scientists, Japan Society for the Promotion of Science (JSPS). L.-J.L. acknowledges support from KAUST (Saudi Arabia), Ministry of Science and Technology, Taiwan Consortium of Emergent Crystalline, Academia Sinica Taiwan, and AOARD-134137 (USA).

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@article{262afb5680e7403e887db4cc125baeb2,

title = "Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers",

abstract = "Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics. {\textcopyright} 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Jiang Pu and Kazuma Funahashi and Chang-Hsiao Chen and Ming-yang Li and Lain-Jong Li and Taishi Takenobu",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: T.T. was partially supported by the Funding Program for the Next Generation of World-Leading Researchers and Grants-in-Aid from MEXT (26107533 {"}Science of Atomic Layers{"} and 25000003 {"}Specially Promoted Research{"}). J.P. and K.F. was supported by the Leading Graduate Program in Science and Engineering, Waseda University from MEXT, and J.P. was also supported by the Research Fellowship for Young Scientists, Japan Society for the Promotion of Science (JSPS). L.-J.L. acknowledges support from KAUST (Saudi Arabia), Ministry of Science and Technology, Taiwan Consortium of Emergent Crystalline, Academia Sinica Taiwan, and AOARD-134137 (USA).",

year = "2016",

month = mar,

day = "23",

doi = "10.1002/adma.201503872",

language = "English (US)",

volume = "28",

pages = "4111--4119",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley",

number = "21",

}

TY - JOUR

T1 - Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

AU - Pu, Jiang

AU - Funahashi, Kazuma

AU - Chen, Chang-Hsiao

AU - Li, Ming-yang

AU - Li, Lain-Jong

AU - Takenobu, Taishi

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: T.T. was partially supported by the Funding Program for the Next Generation of World-Leading Researchers and Grants-in-Aid from MEXT (26107533 "Science of Atomic Layers" and 25000003 "Specially Promoted Research"). J.P. and K.F. was supported by the Leading Graduate Program in Science and Engineering, Waseda University from MEXT, and J.P. was also supported by the Research Fellowship for Young Scientists, Japan Society for the Promotion of Science (JSPS). L.-J.L. acknowledges support from KAUST (Saudi Arabia), Ministry of Science and Technology, Taiwan Consortium of Emergent Crystalline, Academia Sinica Taiwan, and AOARD-134137 (USA).

PY - 2016/3/23

Y1 - 2016/3/23

N2 - Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - Complementary inverters constructed from large-area monolayers of WSe2 and MoS2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - http://hdl.handle.net/10754/621554

UR - http://onlinelibrary.wiley.com/doi/10.1002/adma.201503872/full

UR - http://www.scopus.com/inward/record.url?scp=84973154907&partnerID=8YFLogxK

U2 - 10.1002/adma.201503872

DO - 10.1002/adma.201503872

M3 - Article

C2 - 27007295

SN - 0935-9648

VL - 28

SP - 4111

EP - 4119

JO - Advanced Materials

JF - Advanced Materials

IS - 21

ER -

Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

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