High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device

Wen Yuan Chang*, Hsin Wei Huang, Wei Ting Wang, Cheng Hao Hou, Yu Lun Chueh, Jr Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The CrZnOPt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrO x at the CrZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrodeoxide interface.

Original languageEnglish (US)
Pages (from-to)G29-G32
Issue number3
StatePublished - 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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