High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors

Sebastian Pazos, Thales Becker, Marco Antonio Villena, Wenwen Zheng, Yaqing Shen, Yue Yuan, Osamah Alharbi, Kaichen Zhu, Juan Bautista Roldán, Gilson Wirth, Felix Palumbo, Mario Lanza*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

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