High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors

Sebastian Pazos, Thales Becker, Marco Antonio Villena, Wenwen Zheng, Yaqing Shen, Yue Yuan, Osamah Alharbi, Kaichen Zhu, Juan Bautista Roldán, Gilson Wirth, Felix Palumbo, Mario Lanza*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

9 Scopus citations

Abstract

Memristor-based electronic memory have recently started commercialization, although its market size is small (~0.5%). Multiple studies claim their potential for hardware implementation of artificial neural networks, advanced data encryption, and high-frequency switches for 5G/6G communication. Application aside, the performance and reliability of memristors need to be improved to increase their market size and fit technology standards. Multiple groups propose novel nano-materials beyond phase-change, metal-oxides, and magnetic materials as resistive switching medium (e.g., two-dimensional, nanowires, perovskites). However, most studies use characterization setups that are blind to critical phenomena in understanding charge transport across the devices. Here an advanced setup with high temporal resolution is used to analyze current noise, dielectric breakdown growth, and ambipolar resistive switching in memristors based on multilayer hexagonal boron nitride (h-BN), one of the most promising novel nano-materials for memristive applications. The random telegraph noise in pristine memristors and its evolution as the devices degrade, covering ~7 orders of magnitude in current with consistent observation, is studied. Additionally, an ambipolar switching regime with very low resistance down to 50Ω and its connection with a telegraph behavior with high/low current ratios >100, linked to a thermally-driven disruption of a metallic nanofilament, is shown.

Original languageEnglish (US)
Article number2213816
JournalAdvanced Functional Materials
Volume34
Issue number15
DOIs
StateAccepted/In press - 2023

Bibliographical note

Funding Information:
This work has been supported by the Ministry of Science and Technology of China (grants no. 2018YFE0100800, 2019YFE0124200), the National Natural Science Foundation of China (grants no. 61874075), the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions, the 111 Project from the State Administration of Foreign Experts Affairs of China, and the Baseline funding program of the King Abdullah University of Science and Technology. Authors also acknowledge the funding from the following Argentinean institutions: Ministerio de Ciencia, Tecnología e Innovación (MINCyT) under Contracts PICT, PICT 2016/0579, and PME 2015‐0196 and PICTE 2018‐0192; UTN‐FRBA under Projects EIUTIBA4395TC3, CCUTIBA4764TC, MATUNBA4936, CCUTNBA5182, and CCUTNBA6615.

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Keywords

  • 2D materials
  • dielectric breakdowns
  • hexagonal boron nitride
  • memristors
  • random telegraph noise
  • resistive switching

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

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