High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

S. R. Sarath Kumar; Abeer Z. Barasheed; Husam N. Alshareef

doi:10.1021/am4015956

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

S. R. Sarath Kumar, Abeer Z. Barasheed, Husam N. Alshareef

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Abstract

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

Original language	English (US)
Pages (from-to)	7268-7273
Number of pages	6
Journal	ACS Applied Materials & Interfaces
Volume	5
Issue number	15
DOIs	https://doi.org/10.1021/am4015956
State	Published - Jul 23 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the FIC grant of KAUST, for oxide thermoelectrics. Authors also thank Dr. Alexandre Jacquot, Fraunhofer IPM, Germany for the thermal conductivity measurements.

ASJC Scopus subject areas

General Materials Science

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10.1021/am4015956

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title = "High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping",

abstract = "We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. {\textcopyright} 2013 American Chemical Society.",

author = "{Sarath Kumar}, {S. R.} and Barasheed, {Abeer Z.} and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the FIC grant of KAUST, for oxide thermoelectrics. Authors also thank Dr. Alexandre Jacquot, Fraunhofer IPM, Germany for the thermal conductivity measurements.",

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AU - Sarath Kumar, S. R.

AU - Barasheed, Abeer Z.

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the FIC grant of KAUST, for oxide thermoelectrics. Authors also thank Dr. Alexandre Jacquot, Fraunhofer IPM, Germany for the thermal conductivity measurements.

PY - 2013/7/23

Y1 - 2013/7/23

N2 - We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

AB - We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

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JF - ACS Applied Materials & Interfaces

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ER -

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

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