High temperature study of flexible silicon-on-insulator fin field-effect transistors

Amer El Hajj Diab; Galo T. Sevilla; Mohamed T. Ghoneim; Muhammad Mustafa Hussain

doi:10.1063/1.4897148

High temperature study of flexible silicon-on-insulator fin field-effect transistors

Amer El Hajj Diab, Galo T. Sevilla, Mohamed T. Ghoneim, Muhammad Mustafa Hussain

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6 Scopus citations

Abstract

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

Original language	English (US)
Pages (from-to)	133509
Journal	Applied Physics Letters
Volume	105
Issue number	13
DOIs	https://doi.org/10.1063/1.4897148
State	Published - Sep 29 2014

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title = "High temperature study of flexible silicon-on-insulator fin field-effect transistors",

abstract = "We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.",

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AU - Diab, Amer El Hajj

AU - Sevilla, Galo T.

AU - Ghoneim, Mohamed T.

AU - Hussain, Muhammad Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/9/29

Y1 - 2014/9/29

N2 - We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

AB - We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

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High temperature study of flexible silicon-on-insulator fin field-effect transistors

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