High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters

Chen Shang, Eamonn Hughes, Yating Wan, Mario Dumont, Rosalyn Koscica, Jennifer Selvidge, Robert Herrick, Arthur C. Gossard, Kunal Mukherjee, John E. Bowers

Research output: Contribution to journalArticlepeer-review

74 Scopus citations


Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-cost and high-functionality photonic integrated circuits. Historically, high temperature reliability of such devices has been the major roadblock due to crystalline defects from heteroepitaxy. Here, by reducing the threading dislocation densities to ∼1x106 cm-2 and efficiently removing misfit dislocations above and below the active region, 1.3 μmInAs quantum-dot lasers directly grown on industry standard on-axis Si (001) show record-breaking reliability at 80°C. The hero device shows minimum degradation after more than 1200 h of constant current stress. Statistical analysis shows an extrapolated lifetime of over 22 years for the median devices, bringing these devices one big step closer to real world applications.
Original languageEnglish (US)
Pages (from-to)749-754
Number of pages6
Issue number5
StatePublished - May 1 2021
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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