High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

B. R. Tak; Manjari Garg; Sheetal Dewan; Carlos G. Torres-Castanedo; Kuang-Hui Li; Vinay Gupta; Xiaohang Li; R. Singh

doi:10.1063/1.5088532

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

B. R. Tak, Manjari Garg, Sheetal Dewan, Carlos G. Torres-Castanedo, Kuang-Hui Li, Vinay Gupta, Xiaohang Li, R. Singh

Research output: Contribution to journal › Article › peer-review

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Abstract

High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo to dark current ratio of about 7100 was observed at room temperature and 2.3 at a high temperature of 250 °C with 10 V applied bias. A decline in photocurrent was observed until a temperature of 150 °C beyond which it increased with temperature up to 250 °C. The suppression of the UV and blue band was also observed in the normalized spectral response curve above 150 °C temperature. Temperature-dependent rise and decay times of temporal response were analyzed to understand the associated photocurrent mechanism at high temperatures. Electron–phonon interaction and self-trapped holes were found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.

Original language	English (US)
Pages (from-to)	144501
Journal	Journal of Applied Physics
Volume	125
Issue number	14
DOIs	https://doi.org/10.1063/1.5088532
State	Published - Apr 8 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01, REP/1/3189-01-01
Acknowledgements: B.R.T. and R.S. would like to thank the Department of Physics, IIT Delhi (IITD), for providing XRD facility. We would also like to acknowledge the Nanoscale Research Facility (NRF), IITD, for device fabrication and characterizations. The Department of Science and Technology (DST), India, is highly appreciated for awarding INSPIRE research fellowship to B.R.T. for the Ph.D. programme. The IITD authors acknowledge the NRF project (No. NRF/RP02395) for research support. The KAUST authors are thankful for the support of KAUST baseline fund (No. BAS/1/1664-01-01), KAUST CRG (No. URF/1/3437-01-01), and GCC Research Council (No. REP/1/3189-01-01).

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10.1063/1.5088532

https://repository.kaust.edu.sa/bitstream/10754/652844/1/1.5088532.pdf

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@article{bb04a40a18414900bd848589551d2dde,

title = "High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors",

abstract = "High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo to dark current ratio of about 7100 was observed at room temperature and 2.3 at a high temperature of 250 °C with 10 V applied bias. A decline in photocurrent was observed until a temperature of 150 °C beyond which it increased with temperature up to 250 °C. The suppression of the UV and blue band was also observed in the normalized spectral response curve above 150 °C temperature. Temperature-dependent rise and decay times of temporal response were analyzed to understand the associated photocurrent mechanism at high temperatures. Electron–phonon interaction and self-trapped holes were found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.",

author = "Tak, {B. R.} and Manjari Garg and Sheetal Dewan and Torres-Castanedo, {Carlos G.} and Kuang-Hui Li and Vinay Gupta and Xiaohang Li and R. Singh",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01, REP/1/3189-01-01 Acknowledgements: B.R.T. and R.S. would like to thank the Department of Physics, IIT Delhi (IITD), for providing XRD facility. We would also like to acknowledge the Nanoscale Research Facility (NRF), IITD, for device fabrication and characterizations. The Department of Science and Technology (DST), India, is highly appreciated for awarding INSPIRE research fellowship to B.R.T. for the Ph.D. programme. The IITD authors acknowledge the NRF project (No. NRF/RP02395) for research support. The KAUST authors are thankful for the support of KAUST baseline fund (No. BAS/1/1664-01-01), KAUST CRG (No. URF/1/3437-01-01), and GCC Research Council (No. REP/1/3189-01-01).",

year = "2019",

month = apr,

day = "8",

doi = "10.1063/1.5088532",

language = "English (US)",

volume = "125",

pages = "144501",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

AU - Tak, B. R.

AU - Garg, Manjari

AU - Dewan, Sheetal

AU - Torres-Castanedo, Carlos G.

AU - Li, Kuang-Hui

AU - Gupta, Vinay

AU - Li, Xiaohang

AU - Singh, R.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01, REP/1/3189-01-01 Acknowledgements: B.R.T. and R.S. would like to thank the Department of Physics, IIT Delhi (IITD), for providing XRD facility. We would also like to acknowledge the Nanoscale Research Facility (NRF), IITD, for device fabrication and characterizations. The Department of Science and Technology (DST), India, is highly appreciated for awarding INSPIRE research fellowship to B.R.T. for the Ph.D. programme. The IITD authors acknowledge the NRF project (No. NRF/RP02395) for research support. The KAUST authors are thankful for the support of KAUST baseline fund (No. BAS/1/1664-01-01), KAUST CRG (No. URF/1/3437-01-01), and GCC Research Council (No. REP/1/3189-01-01).

PY - 2019/4/8

Y1 - 2019/4/8

N2 - High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo to dark current ratio of about 7100 was observed at room temperature and 2.3 at a high temperature of 250 °C with 10 V applied bias. A decline in photocurrent was observed until a temperature of 150 °C beyond which it increased with temperature up to 250 °C. The suppression of the UV and blue band was also observed in the normalized spectral response curve above 150 °C temperature. Temperature-dependent rise and decay times of temporal response were analyzed to understand the associated photocurrent mechanism at high temperatures. Electron–phonon interaction and self-trapped holes were found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.

AB - High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo to dark current ratio of about 7100 was observed at room temperature and 2.3 at a high temperature of 250 °C with 10 V applied bias. A decline in photocurrent was observed until a temperature of 150 °C beyond which it increased with temperature up to 250 °C. The suppression of the UV and blue band was also observed in the normalized spectral response curve above 150 °C temperature. Temperature-dependent rise and decay times of temporal response were analyzed to understand the associated photocurrent mechanism at high temperatures. Electron–phonon interaction and self-trapped holes were found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.

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UR - https://aip.scitation.org/doi/10.1063/1.5088532

UR - http://www.scopus.com/inward/record.url?scp=85064154364&partnerID=8YFLogxK

U2 - 10.1063/1.5088532

DO - 10.1063/1.5088532

M3 - Article

SN - 0021-8979

VL - 125

SP - 144501

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 14

ER -

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

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